公开(公告)号：US08546263B2

公开(公告)日：2013-10-01

申请号：US13095736

申请日：2011-04-27

申请人： Olivier Joubert ,  Benjamin Schwarz ,  Jérémy Gilbert Maurice Pereira ,  Kevin Menguelti ,  Erwine Maude Pargon ,  Maxime Darnon

发明人： Olivier Joubert ,  Benjamin Schwarz ,  Jérémy Gilbert Maurice Pereira ,  Kevin Menguelti ,  Erwine Maude Pargon ,  Maxime Darnon

IPC分类号： H01L21/302

CPC分类号： H01L43/12

摘要： Embodiments of the invention generally relate to methods for fabricating devices on semiconductor substrates. More specifically, embodiments of the invention relate to methods of patterning magnetic materials. Certain embodiments described herein use a reducing chemistry containing a hydrogen gas or hydrogen containing gas with an optional dilution gas at temperatures ranging from 20 to 300 degrees Celsius at a substrate bias less than 1,000 DC voltage to reduce the amount of sputtering and redeposition. Exemplary hydrogen containing gases which may be used with the embodiments described herein include NH3, H2, CH4, C2H4, SiH4, and H2S. It has been found that patterning a magnetic tunnel junction with an oxidizer-free gas mixture comprising hydrogen maintains the integrity of the magnetic tunnel junction without producing harmful conductive residue.

摘要翻译： 本发明的实施例一般涉及在半导体衬底上制造器件的方法。 更具体地，本发明的实施例涉及图案化磁性材料的方法。 本文所述的某些实施方案使用含有氢气或含氢气体的还原化学物质，其具有任选的稀释气体，温度范围为20-300摄氏度，衬底偏压小于1,000直流电压，以减少溅射和再沉积的量。 可与本文所述实施方案一起使用的示例性含氢气体包括NH 3，H 2，CH 4，C 2 H 4，SiH 4和H 2 S. 已经发现，使用包含氢的无氧化剂气体混合物构图磁隧道结保持了磁性隧道结的完整性，而不会产生有害的导电残留物。

公开(公告)号：US20120276657A1

公开(公告)日：2012-11-01

申请号：US13095736

申请日：2011-04-27

申请人： Olivier Joubert ,  Benjamin Schwarz ,  Jérémy Gilbert Maurice Pereira ,  Kevin Menguelti ,  Erwine Maude Pargon ,  Maxime Darnon

发明人： Olivier Joubert ,  Benjamin Schwarz ,  Jérémy Gilbert Maurice Pereira ,  Kevin Menguelti ,  Erwine Maude Pargon ,  Maxime Darnon

IPC分类号： H01L21/8246

CPC分类号： H01L43/12

摘要： Embodiments of the invention generally relate to methods for fabricating devices on semiconductor substrates. More specifically, embodiments of the invention relate to methods of patterning magnetic materials. Certain embodiments described herein use a reducing chemistry containing a hydrogen gas or hydrogen containing gas with an optional dilution gas at temperatures ranging from 20 to 300 degrees Celsius at a substrate bias less than 1,000 DC voltage to reduce the amount of sputtering and redeposition. Exemplary hydrogen containing gases which may be used with the embodiments described herein include NH3, H2, CH4, C2H4, SiH4, and H2S. It has been found that patterning a magnetic tunnel junction with an oxidizer-free gas mixture comprising hydrogen maintains the integrity of the magnetic tunnel junction without producing harmful conductive residue.

摘要翻译： 本发明的实施例一般涉及在半导体衬底上制造器件的方法。 更具体地，本发明的实施例涉及图案化磁性材料的方法。 本文所述的某些实施方案使用含有氢气或含氢气体的还原化学物质，其具有任选的稀释气体，温度范围为20-300摄氏度，衬底偏压小于1,000直流电压，以减少溅射和再沉积的量。 可与本文所述实施方案一起使用的示例性含氢气体包括NH 3，H 2，CH 4，C 2 H 4，SiH 4和H 2 S. 已经发现，使用包含氢的无氧化剂气体混合物构图磁隧道结保持了磁性隧道结的完整性，而不会产生有害的导电残留物。