发明申请
- 专利标题： Field Effect Transistor Devices with Low Source Resistance
- 专利标题（中）： 具有低源电阻的场效应晶体管器件
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申请号： US13108440申请日： 2011-05-16
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公开(公告)号： US20120280270A1公开(公告)日： 2012-11-08
- 发明人: Sei-Hyung Ryu , Doyle Craig Capell , Lin Cheng , Sarit Dhar , Charlotte Jonas , Anant Agarwal , John Palmour
- 申请人： Sei-Hyung Ryu , Doyle Craig Capell , Lin Cheng , Sarit Dhar , Charlotte Jonas , Anant Agarwal , John Palmour
- 主分类号： H01L29/739
- IPC分类号： H01L29/739 ; H01L29/78
摘要：
A semiconductor device includes a drift layer having a first conductivity type, a well region in the drift layer having a second conductivity type opposite the first conductivity type, and a source region in the well region, The source region has the first conductivity type and defines a channel region in the well region. The source region includes a lateral source region adjacent the channel region and a plurality of source contact regions extending away from the lateral source region opposite the channel region. A body contact region having the second conductivity type is between at least two of the plurality of source contact regions and is in contact with the well region. A source ohmic contact overlaps at least one of the source contact regions and the body contact region. A minimum dimension of a source contact area of the semiconductor device is defined by an area of overlap between the source ohmic contact and the at least one source contact region.
公开/授权文献
- US09142662B2 Field effect transistor devices with low source resistance 公开/授权日：2015-09-22
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