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发明申请
US20120280353A1 PROTECTIVE ELEMENT FOR ELECTRONIC CIRCUITS 有权
电子电路保护元件

  • 专利标题： PROTECTIVE ELEMENT FOR ELECTRONIC CIRCUITS
  • 专利标题（中）： 电子电路保护元件
  • 申请号： US13505534
    申请日： 2010-09-21
  • 公开(公告)号： US20120280353A1
    公开(公告)日： 2012-11-08
  • 发明人: Ning Qu , Alfred Goerlach
  • 申请人： Ning Qu , Alfred Goerlach
  • 优先权： DE102009046606.1 20091111
  • 国际申请： PCT/EP2010/063849 WO 20100921
  • 主分类号： H01L29/47
  • IPC分类号： H01L29/47 ;  H01L21/20
PROTECTIVE ELEMENT FOR ELECTRONIC CIRCUITS
摘要：
A protective element for electronics has at least one Schottky diode and at least one Zener diode which are located between a power supply and the electronics, the anode of the Schottky diode being connected to the power supply and the cathode of the Schottky diode being connected to the electronics, and the cathode and the anode of the Zener diode are connected to ground. The Schottky diode is a trench MOS barrier junction diode or trench MOS barrier Schottky (TMBS) diode or a trench junction barrier Schottky (TJBS) diode and includes an integrated semiconductor arrangement, which has at least one trench MOS barrier Schottky diode and a p-doped substrate, which is used as the anode of the Zener diode.
摘要（中）：

用于电子器件的保护元件具有至少一个肖特基二极管和位于电源和电子器件之间的至少一个齐纳二极管，肖特基二极管的阳极连接到电源，肖特基二极管的阴极连接到 电子器件，齐纳二极管的阴极和阳极连接到地。 肖特基二极管是沟槽MOS势垒结二极管或沟槽MOS势垒肖特基（TMBS）二极管或沟槽结势垒肖特基（TJBS）二极管，并且包括集成半导体布置，其具有至少一个沟槽MOS势垒肖特基二极管和p- 掺杂衬底，用作齐纳二极管的阳极。

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