公开(公告)号：US20140239435A1

公开(公告)日：2014-08-28

申请号：US14236604

申请日：2012-07-19

申请人： Ning Qu ,  Alfred Goerlach

发明人： Ning Qu ,  Alfred Goerlach

IPC分类号： H01L29/06 ,  H01L29/868 ,  H01L29/872

CPC分类号： H01L29/0634 ,  H01L29/0649 ,  H01L29/66143 ,  H01L29/868 ,  H01L29/872

摘要： A semiconductor chip has an n+-doped substrate, above which an n-doped epilayer having trenches is introduced, the trenches being filled with p-doped semiconductor material and in each case having a highly p-doped region at their top side, such that an alternating arrangement of n-doped regions having a first width and p-doped regions having a second width is present. A first metal layer functioning as an anode is provided on the front side of the chip and forms a Schottky contact with the n-doped epilayer and forms an ohmic contact with the highly p-doped regions. A second metal layer which represents an ohmic contact and functioning as a cathode is formed on the rear side of the semiconductor chip. A dielectric layer is provided between each n-doped region and an adjacent p-doped region.

摘要翻译： 半导体芯片具有n +掺杂的衬底，其上引入具有沟槽的n掺杂外延层，沟槽被p掺杂半导体材料填充，并且在每种情况下在其顶侧具有高p掺杂区域，使得 存在具有第一宽度的n掺杂区域和具有第二宽度的p掺杂区域的交替布置。 用作阳极的第一金属层设置在芯片的正面，并与n掺杂的外延层形成肖特基接触，并与高p掺杂区形成欧姆接触。 表示欧姆接触并用作阴极的第二金属层形成在半导体芯片的后侧。 在每个n掺杂区域和相邻的p掺杂区域之间提供介电层。

公开(公告)号：US08334179B2

公开(公告)日：2012-12-18

申请号：US12733775

申请日：2008-09-17

申请人： Ning Qu ,  Alfred Goerlach

发明人： Ning Qu ,  Alfred Goerlach

IPC分类号： H01L21/8234

CPC分类号： H01L29/868 ,  H01L29/0611 ,  H01L29/0623 ,  H01L29/161 ,  H01L29/861 ,  H01L29/872 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor system is described, which is made up of a highly n-doped silicon substrate and a first n-silicon epitaxial layer, which is directly contiguous to the highly n-doped silicon substrate, and having a p-doped SiGe layer, which is contiguous to a second n-doped silicon epitaxial layer and forms a heterojunction diode, which is situated above the first n-doped silicon epitaxial layer and in which the pn-junction is situated within the p-doped SiGe layer. The first n-silicon epitaxial layer has a higher doping concentration than the second n-silicon epitaxial layer. Situated between the two n-doped epitaxial layers is at least one p-doped emitter trough, which forms a buried emitter, a pn-junction both to the first n-doped silicon epitaxial layer and also to the second n-doped silicon epitaxial layer being formed, and the at least one emitter trough being completely enclosed by the two epitaxial layers.

摘要翻译： 描述了半导体系统，其由高度n掺杂的硅衬底和与第一n型硅衬底直接相邻并具有p掺杂的SiGe层的第一n型硅外延层组成，其中 与第二n掺杂硅外延层邻接并形成异质结二极管，该异质结二极管位于第一n掺杂硅外延层之上，并且其中pn结位于p掺杂SiGe层内。 第一n硅外延层具有比第二n硅外延层更高的掺杂浓度。 位于两个n掺杂外延层之间的是至少一个p掺杂的发射极沟槽，其形成掩埋发射极，pn结与第一n掺杂硅外延层以及第二n掺杂硅外延层 并且所述至少一个发射极槽被两个外延层完全包围。

公开(公告)号：US20120280353A1

公开(公告)日：2012-11-08

申请号：US13505534

申请日：2010-09-21

申请人： Ning Qu ,  Alfred Goerlach

发明人： Ning Qu ,  Alfred Goerlach

IPC分类号： H01L29/47 ,  H01L21/20

CPC分类号： H01L27/0248 ,  H01L29/866 ,  H01L29/872 ,  H01L29/8725

摘要： A protective element for electronics has at least one Schottky diode and at least one Zener diode which are located between a power supply and the electronics, the anode of the Schottky diode being connected to the power supply and the cathode of the Schottky diode being connected to the electronics, and the cathode and the anode of the Zener diode are connected to ground. The Schottky diode is a trench MOS barrier junction diode or trench MOS barrier Schottky (TMBS) diode or a trench junction barrier Schottky (TJBS) diode and includes an integrated semiconductor arrangement, which has at least one trench MOS barrier Schottky diode and a p-doped substrate, which is used as the anode of the Zener diode.

摘要翻译： 用于电子器件的保护元件具有至少一个肖特基二极管和位于电源和电子器件之间的至少一个齐纳二极管，肖特基二极管的阳极连接到电源，肖特基二极管的阴极连接到 电子器件，齐纳二极管的阴极和阳极连接到地。 肖特基二极管是沟槽MOS势垒结二极管或沟槽MOS势垒肖特基（TMBS）二极管或沟槽结势垒肖特基（TJBS）二极管，并且包括集成半导体布置，其具有至少一个沟槽MOS势垒肖特基二极管和p- 掺杂衬底，用作齐纳二极管的阳极。

公开(公告)号：US20100237456A1

公开(公告)日：2010-09-23

申请号：US12733753

申请日：2008-09-15

申请人： Ning Qu ,  Alfred Goerlach

发明人： Ning Qu ,  Alfred Goerlach

IPC分类号： H01L29/866

CPC分类号： H01L29/0634 ,  H01L29/0619 ,  H01L29/0649 ,  H01L29/872 ,  H01L29/8725

摘要： A semiconductor system having a trench MOS barrier Schottky diode, having an integrated substrate PN diode as a clamping element (TMBS-ub-PN), suitable in particular as a Zener diode having a breakdown voltage of approximately 20V for use in a vehicle generator system, the TMBS-sub-PN being made up of a combination of Schottky diode, MOS structure, and substrate PN diode, and the breakdown voltage of substrate PN diode BV_pn being lower than the breakdown voltage of Schottky diode BV_schottky and the breakdown voltage of MOS structure BV_mos.

摘要翻译： 具有沟槽MOS势垒肖特基二极管的半导体系统，其具有作为钳位元件（TMBS-ub-PN）的集成衬底PN二极管，特别适用于具有大约20V的击穿电压的齐纳二极管，用于车辆发电机系统 TMBS-sub-PN由肖特基二极管，MOS结构和衬底PN二极管的组合构成，并且衬底PN二极管BV_pn的击穿电压低于肖特基二极管BV_肖特基的击穿电压和MOS的击穿电压 结构BV_mos。

公开(公告)号：US20090206438A1

公开(公告)日：2009-08-20

申请号：US11664857

申请日：2005-09-12

申请人： Peter Flohrs ,  Alfred Goerlach ,  Peter Urbach ,  Wolfgang Feiler ,  Ning Qu ,  Klaus Heyers

发明人： Peter Flohrs ,  Alfred Goerlach ,  Peter Urbach ,  Wolfgang Feiler ,  Ning Qu ,  Klaus Heyers

IPC分类号： H01L29/66 ,  H01L21/24 ,  H01L21/50

CPC分类号： H01L28/20 ,  G01K7/22 ,  H01L27/0802 ,  H01L29/8605 ,  H01L29/8611

摘要： A semiconductor component and a method for manufacturing such a semiconductor component which has a resistance behavior which depends heavily on the temperature. This resistance behavior is obtained by a special multi-layer structure of the semiconductor component, one layer being designed in such a way that, for example, multiple p-doped regions are present in an n-doped region, said regions being short-circuited on one side via a metal-plated layer. For example, the semiconductor component may be used for reducing current peaks, by being integrated into a conductor. In the cold state, the semiconductor component has a high resistance which becomes significantly lower when the semiconductor component is heated as a result of the flowing current.

摘要翻译： 一种半导体元件及其制造方法，该半导体元件具有很大程度上取决于温度的电阻特性。 该电阻特性通过半导体元件的特殊的多层结构获得，一层被设计成例如在n掺杂区域中存在多个p掺杂区域，所述区域被短路 在一侧通过金属镀层。 例如，半导体组件可以用于通过集成到导体中来减小电流峰值。 在冷态中，当由于流动电流而加热半导体元件时，半导体元件具有高电阻，其变得明显较低。

公开(公告)号：US20090032897A1

公开(公告)日：2009-02-05

申请号：US11792896

申请日：2005-10-13

申请人： Alfred Goerlach ,  Ning Qu

发明人： Alfred Goerlach ,  Ning Qu

IPC分类号： H01L29/872 ,  H01L21/329

CPC分类号： H01L29/66143 ,  H01L29/861 ,  H01L29/866 ,  H01L29/872

摘要： In semiconductor devices and methods for their manufacture, the semiconductor devices are arranged as a trench-Schottky-barrier-Schottky diode having a pn diode as a clamping element (TSBS-pn), and having additional properties compared to usual TSBS elements which make possible adaptation of the electrical properties. The TSBS-pn diodes are produced using special manufacturing methods, are arranged in their physical properties such that they are suitable for use in a rectifier for a motor vehicle generator, and are also able to be operated as Z diodes.

摘要翻译： 在半导体器件及其制造方法中，半导体器件被布置为具有pn二极管作为钳位元件（TSBS-pn）的沟槽肖特基势垒 - 肖特基二极管，并且与通常的TSBS元件相比具有额外的特性，这使得可能 适应电气性能。 TSBS-pn二极管使用特殊的制造方法制造，其物理性质被布置成适用于用于机动车辆发电机的整流器，并且也可以作为Z二极管操作。

公开(公告)号：US09263597B2

公开(公告)日：2016-02-16

申请号：US13882412

申请日：2011-09-09

申请人： Ning Qu ,  Alfred Goerlach

发明人： Ning Qu ,  Alfred Goerlach

IPC分类号： H01L29/872 ,  H01L29/40 ,  H01L29/417

CPC分类号： H01L29/872 ,  H01L29/404 ,  H01L29/417

摘要： A semiconductor assemblage of a super-trench Schottky barrier diode (STSBD) made up of an n+ substrate, an n-epilayer, trenches etched into the n-epilayer that have a width and a distance from the n+ substrate, mesa regions between the adjacent trenches having a width, a metal layer on the front side of the chip that is a Schottky contact and serves as an anode electrode, and a metal layer on the back side of the chip that is an ohmic contact and serves as a cathode electrode, wherein multiple Schottky contacts having a width or distance and a distance between the Schottky contacts, and between the Schottky contact as anode electrode and the first Schottky contact, are located on the trench wall.

摘要翻译： 由n +衬底，n-外延层，蚀刻到n-外延层中的与n +衬底具有宽度和距离的沟槽组成的超沟槽肖特基势垒二极管（STSBD）的半导体组件，相邻的n +衬底之间的台面区域 具有宽度的沟槽，作为肖特基接触的芯片的前侧上的金属层，用作阳极电极，以及作为欧姆接触并用作阴极电极的芯片背面的金属层， 其中具有宽度或距离以及肖特基接触之间以及作为阳极电极的肖特基接触和第一肖特基接触之间的多个肖特基接触位于沟槽壁上。

公开(公告)号：US09082628B2

公开(公告)日：2015-07-14

申请号：US13984604

申请日：2011-12-14

申请人： Ning Qu ,  Alfred Goerlach

发明人： Ning Qu ,  Alfred Goerlach

IPC分类号： H01L29/47 ,  H01L29/06 ,  H01L29/36 ,  H01L29/872

CPC分类号： H01L29/0615 ,  H01L29/36 ,  H01L29/872 ,  H01L29/8725

摘要： A trench Schottky diode is described, which has a highly doped substrate of a first conductivity type and an epitaxial layer of the same conductivity type that is applied to the substrate. At least two trenches are introduced into the epitaxial layer. The epitaxial layer is a stepped epitaxial layer that has two partial layers of different doping concentrations.

摘要翻译： 描述了一种沟槽肖特基二极管，其具有第一导电类型的高掺杂衬底和施加到衬底的相同导电类型的外延层。 至少两个沟槽被引入到外延层中。 外延层是具有不同掺杂浓度的两个部分层的阶梯式外延层。

公开(公告)号：US20150091125A1

公开(公告)日：2015-04-02

申请号：US14504965

申请日：2014-10-02

申请人： Alfred GOERLACH ,  Ning Qu

发明人： Alfred GOERLACH ,  Ning Qu

IPC分类号： H01L27/06 ,  H01L29/06 ,  H01L29/732 ,  H01L29/16 ,  H01L29/872 ,  H01L29/73

CPC分类号： H01L27/0664 ,  H01L27/0766 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/16 ,  H01L29/36 ,  H01L29/66143 ,  H01L29/7302 ,  H01L29/732 ,  H01L29/861 ,  H01L29/872 ,  H01L29/8725

摘要： A semiconductor array is described whose breakdown voltage has only a very low temperature coefficient or none at all and therefore there is little or no temperature-dependent voltage rise. The voltage limitation is achieved by a punch-through effect.

摘要翻译： 描述了其击穿电压仅具有非常低的温度系数或根本不存在的半导体阵列，因此几乎没有或没有温度依赖的电压上升。 电压限制通过穿通效果实现。

公开(公告)号：US08836072B2

公开(公告)日：2014-09-16

申请号：US13382982

申请日：2010-06-09

申请人： Ning Qu ,  Alfred Goerlach

发明人： Ning Qu ,  Alfred Goerlach

IPC分类号： H01L29/66

CPC分类号： H01L29/872 ,  H01L29/0619 ,  H01L29/66143

摘要： A semiconductor system is described, which includes a trench junction barrier Schottky diode having an integrated p-n type diode as a clamping element, which is suitable for use in motor vehicle generator system, in particular as a Zener diode having a breakdown voltage of approximately 20V. In this case, the TJBS is a combination of a Schottky diode and a p-n type diode. Where the breakdown voltages are concerned, the breakdown voltage of the p-n type diode is lower than the breakdown voltage of Schottky diode. The semiconductor system may therefore be operated using high currents at breakdown.

摘要翻译： 描述了一种半导体系统，其包括具有集成p-n型二极管作为钳位元件的沟槽结屏障肖特基二极管，其适用于机动车辆发电机系统，特别是作为击穿电压为约20V的齐纳二极管。 在这种情况下，TJBS是肖特基二极管和p-n型二极管的组合。 在击穿电压的情况下，p-n型二极管的击穿电压低于肖特基二极管的击穿电压。 因此，半导体系统可以在击穿时使用大电流来操作。