A neuron device includes a bottom electrode, a top electrode, and a layer of metal oxide variable resistance material sandwiched between the bottom electrode and the top electrode, in which the neuron device is switched to a normal state upon application of reset pulse, and is switched to an excitation state upon application of stimulus pulses. The neuron device has a comprehensive response to different amplitude, different width of a stimulus voltage pulse and different number of a sequence of stimulus pulses, and provides functionalities of a weighting section and a computing section. The neuron device has a simple structure, excellent scalability, quick speed, low operation voltage, and is compatible with the conventional silicon-based CMOS fabrication process, and thus suitable for mass production. The neuron device is capable of performing many biological functions and complex logic operations.