发明申请
- 专利标题: METHODS OF DRY STRIPPING BORON-CARBON FILMS
- 专利标题(中): 干法剥离硼砂膜的方法
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申请号: US13456404申请日: 2012-04-26
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公开(公告)号: US20120285492A1公开(公告)日: 2012-11-15
- 发明人: Kwangduk Douglas Lee , Sudha Rathi , Ramprakash Sankarakrishnan , Martin Jay Seamons , Irfan Jamil , Bok Hoen Kim
- 申请人: Kwangduk Douglas Lee , Sudha Rathi , Ramprakash Sankarakrishnan , Martin Jay Seamons , Irfan Jamil , Bok Hoen Kim
- 申请人地址: US CA Santa Clara
- 专利权人: Applied Materials, Inc.
- 当前专利权人: Applied Materials, Inc.
- 当前专利权人地址: US CA Santa Clara
- 主分类号: B08B5/00
- IPC分类号: B08B5/00
摘要:
Embodiments of the invention generally relate to methods of dry stripping boron-carbon films. In one embodiment, alternating plasmas of hydrogen and oxygen are used to remove a boron-carbon film. In another embodiment, co-flowed oxygen and hydrogen plasma is used to remove a boron-carbon containing film. A nitrous oxide plasma may be used in addition to or as an alternative to either of the above oxygen plasmas. In another embodiment, a plasma generated from water vapor is used to remove a boron-carbon film. The boron-carbon removal processes may also include an optional polymer removal process prior to removal of the boron-carbon films. The polymer removal process includes exposing the boron-carbon film to NF3 to remove from the surface of the boron-carbon film any carbon-based polymers generated during a substrate etching process.
公开/授权文献
- US09299581B2 Methods of dry stripping boron-carbon films 公开/授权日:2016-03-29
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