发明申请
- 专利标题： THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
- 专利标题（中）： 薄膜晶体管及其制造方法
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申请号： US13487409申请日： 2012-06-04
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公开(公告)号： US20120286272A1公开(公告)日： 2012-11-15
- 发明人: Hong-Long NING , Byeong-Beom KIM , Chang-Oh JEONG , Sang-Won SHIN , Hyeong-Suk YOO , Xin-Xing LI , Joon-Yong PARK , Hyun-Ju KANG , Su-Kyoung YANG , Kyung-Seop KIM
- 申请人： Hong-Long NING , Byeong-Beom KIM , Chang-Oh JEONG , Sang-Won SHIN , Hyeong-Suk YOO , Xin-Xing LI , Joon-Yong PARK , Hyun-Ju KANG , Su-Kyoung YANG , Kyung-Seop KIM
- 申请人地址： KR Yongin-City
- 专利权人： SAMSUNG DISPLAY CO., LTD.
- 当前专利权人： SAMSUNG DISPLAY CO., LTD.
- 当前专利权人地址： KR Yongin-City
- 优先权： KR2011-0129148 20110512
- 主分类号： H01L29/786
- IPC分类号： H01L29/786 ; H01L33/08
摘要：
A thin film transistor includes a gate electrode on a substrate, a main active layer in electrical connection with the gate electrode and including an exposed channel portion, a source electrode in electrical connection with the main active layer, a drain electrode which is spaced apart from the source electrode and in electrical connection with the main active layer, and a sub active layer in electrical connection to the main active layer.
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