发明申请
- 专利标题： POWER SEMICONDUCTOR MODULE
- 专利标题（中）： 功率半导体模块
-
申请号： US13521586申请日： 2011-01-12
-
公开(公告)号： US20120286292A1公开(公告)日： 2012-11-15
- 发明人: Yasushi Nakayama , Takayoshi Miki , Takeshi Oi , Kazuhiro Tada , Shiori Idaka , Shigeru Hasegawa , Takeshi Tanaka
- 申请人： Yasushi Nakayama , Takayoshi Miki , Takeshi Oi , Kazuhiro Tada , Shiori Idaka , Shigeru Hasegawa , Takeshi Tanaka
- 申请人地址： JP Tokyo
- 专利权人： MITSUBISHI ELECTRIC CORPORATION
- 当前专利权人： MITSUBISHI ELECTRIC CORPORATION
- 当前专利权人地址： JP Tokyo
- 优先权： JP2010-006952 20100115
- 国际申请： PCT/JP2011/000088 WO 20110112
- 主分类号： H01L29/24
- IPC分类号： H01L29/24 ; H01L29/16 ; H01L29/20
摘要：
A power semiconductor module in which temperature rise of switching elements made of a Si semiconductor can be suppressed low and efficiency of cooling the module can be enhanced. To that end, the power semiconductor module includes switching elements made of the Si semiconductor and diodes made of a wide-bandgap semiconductor, the diodes are arranged in the middle region of the power semiconductor module, and the switching elements are arranged in both sides or in the periphery of the middle region of the power semiconductor module.
公开/授权文献
- US09129885B2 Power semiconductor module 公开/授权日：2015-09-08
信息查询
IPC分类:
