公开(公告)号：US09129885B2

公开(公告)日：2015-09-08

申请号：US13521586

申请日：2011-01-12

申请人： Yasushi Nakayama ,  Takayoshi Miki ,  Takeshi Oi ,  Kazuhiro Tada ,  Shiori Idaka ,  Shigeru Hasegawa ,  Takeshi Tanaka

发明人： Yasushi Nakayama ,  Takayoshi Miki ,  Takeshi Oi ,  Kazuhiro Tada ,  Shiori Idaka ,  Shigeru Hasegawa ,  Takeshi Tanaka

IPC分类号： H01L29/24 ,  H01L25/18 ,  H01L23/24 ,  H01L23/31 ,  H01L23/373 ,  H01L25/07 ,  H01L29/16 ,  H01L23/00

CPC分类号： H01L25/18 ,  H01L23/24 ,  H01L23/3135 ,  H01L23/3735 ,  H01L24/48 ,  H01L24/49 ,  H01L25/072 ,  H01L29/1608 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48227 ,  H01L2224/49111 ,  H01L2224/49175 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/10253 ,  H01L2924/10254 ,  H01L2924/10272 ,  H01L2924/1033 ,  H01L2924/12031 ,  H01L2924/12032 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/15311 ,  H01L2924/19107 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A power semiconductor module in which temperature rise of switching elements made of a Si semiconductor can be suppressed low and efficiency of cooling the module can be enhanced. To that end, the power semiconductor module includes switching elements made of the Si semiconductor and diodes made of a wide-bandgap semiconductor, the diodes are arranged in the middle region of the power semiconductor module, and the switching elements are arranged in both sides or in the periphery of the middle region of the power semiconductor module.

摘要翻译： 可以抑制由Si半导体构成的开关元件的温度上升的功率半导体模块，并且可以提高冷却模块的效率。 为此，功率半导体模块包括由Si半导体制成的开关元件和由宽带隙半导体制成的二极管，二极管被布置在功率半导体模块的中间区域中，并且开关元件布置在两侧或 在功率半导体模块的中间区域的外围。

公开(公告)号：US20140367702A1

公开(公告)日：2014-12-18

申请号：US14370803

申请日：2012-07-25

申请人： Kei Yamamoto ,  Kazuhiro Tada ,  Hideki Komori ,  Toru Kimura ,  Masaki Goto ,  Hiroyuki Yoshihara

发明人： Kei Yamamoto ,  Kazuhiro Tada ,  Hideki Komori ,  Toru Kimura ,  Masaki Goto ,  Hiroyuki Yoshihara

IPC分类号： H01L23/367 ,  H01L29/20 ,  H01L21/56 ,  H01L29/16 ,  H01L23/31 ,  H01L21/48

CPC分类号： H01L23/3672 ,  H01L21/4871 ,  H01L21/4882 ,  H01L21/56 ,  H01L21/565 ,  H01L23/3107 ,  H01L23/3735 ,  H01L23/4334 ,  H01L29/1602 ,  H01L29/1608 ,  H01L29/2003 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00014

摘要： An object is to provide a fin integrated type semiconductor device and a method of manufacturing the same, which are provided with a simple structure and good heat dissipation characteristics. The semiconductor device includes: a base plate on which fins arranged in a standing condition are formed on a first main face; an insulating layer formed on a second main face of the base plate, the second main face being opposite to the first main face of the base plate; a circuit pattern fixed to the insulating layer; and a semiconductor element joined to the circuit pattern. The fins are formed with slits that pass through in the thickness direction of the fins.

摘要翻译： 目的在于提供一种鳍状集成型半导体器件及其制造方法，其具有简单的结构和良好的散热特性。 半导体器件包括：在第一主面上形成有以直立状态排列的翅片的基板; 绝缘层，形成在所述基板的第二主面上，所述第二主面与所述基板的所述第一主面相对; 固定到所述绝缘层的电路图案; 以及连接到电路图案的半导体元件。 翅片形成有沿翅片的厚度方向穿过的狭缝。

公开(公告)号：US07151311B2

公开(公告)日：2006-12-19

申请号：US10413288

申请日：2003-04-15

申请人： Dai Nakajima ,  Kazuhiro Tada ,  Taketoshi Shikano ,  Yasunari Hino

发明人： Dai Nakajima ,  Kazuhiro Tada ,  Taketoshi Shikano ,  Yasunari Hino

IPC分类号： H01L23/34

CPC分类号： H01L23/49537 ,  H01L21/565 ,  H01L23/42 ,  H01L23/4334 ,  H01L23/49562 ,  H01L24/28 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/2929 ,  H01L2224/29386 ,  H01L2224/32014 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/73265 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/0105 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/2076 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/0503 ,  H01L2924/0665 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299 ,  H01L2924/00012

摘要： An insulating sheet consisting of a metal layer and an unhardened insulating resin layer is formed. The insulating resin layer contains a filler having grains of, e.g., scale-like shape and has thixotropy, and its outer size is larger than that of a bottom surface of a metal plate. The insulating sheet is disposed on a bottom surface of a cavity of a mold die and the metal plate is disposed on an upper surface of the insulating resin layer. On a main surface of the metal plate, a power semiconductor chip connected to a frame and another frame through a wire is mounted. The cavity is fully filled with a liquid mold resin in this state. After that, the insulating resin layer is hardened at the same timing as the hardening of the mold resin, and the insulating resin and the metal plate are fixed to each other. An interface between the insulating resin layer and the metal plate is included in the upper surface of the insulating resin layer.

摘要翻译： 形成由金属层和未硬化的绝缘树脂层构成的绝缘片。 绝缘树脂层含有具有例如鳞片状的颗粒的具有触变性的填料，其外形尺寸大于金属板的底面的外形尺寸。 绝缘片设置在模具的模腔的底面上，并且金属板设置在绝缘树脂层的上表面上。 在金属板的主表面上安装有通过线连接到框架和另一框架的功率半导体芯片。 在这种状态下，模腔充满液态树脂。 之后，绝缘树脂层在与模制树脂的硬化相同的时刻硬化，绝缘树脂和金属板相互固定。 绝缘树脂层和金属板之间的界面包括在绝缘树脂层的上表面中。

公开(公告)号：US4814461A

公开(公告)日：1989-03-21

申请号：US7655

申请日：1987-01-28

申请人： Takaharu Ikeda ,  Kazuhiro Tada

发明人： Takaharu Ikeda ,  Kazuhiro Tada

IPC分类号： B01J21/00 ,  B01J27/06 ,  B01J31/00 ,  B01J31/04 ,  C07B61/00 ,  C07D249/08 ,  C07D521/00 ,  C07D249/12

CPC分类号： C07D231/12 ,  C07D233/56 ,  C07D249/08

摘要： A novel process for preparing E-isomer of a triazolyl styryl ketone derivative of the formula (I): ##STR1## which includes treating Z-isomer of the derivative (which may contain E-isomer of the derivative) with sulfuric acid and an isomerization catalyst in an organic solvent, precipitating and separating the resulting sulfuric acid salt of E-isomer from the solution, and decomposing the resulting precipitate to obtain E-isomer of the derivative free from sulfuric acid. The E-isomer is useful for preparing E-isomer of triazolyl styryl carbinol of the formula (II): ##STR2## which is useful as an antimicrobial agent, a herbicide, a plant growth regulator, or the like.

摘要翻译： 一种制备式（I）的三唑基苯乙烯基酮衍生物的E-异构体的新方法：其中包括用硫酸处理衍生物的Z-异构体（其可含有衍生物的E-异构体） 和有机溶剂中的异构化催化剂，从溶液中沉淀并分离得到的E-异构体的硫酸盐，并分解所得沉淀物，得到不含硫酸的衍生物的E-异构体。 E型异构体可用于制备式（II）的三唑基苯乙烯基甲醇的E-异构体：可用作抗微生物剂，除草剂，植物生长调节剂等的图像（II）。

公开(公告)号：US20120286292A1

公开(公告)日：2012-11-15

申请号：US13521586

申请日：2011-01-12

申请人： Yasushi Nakayama ,  Takayoshi Miki ,  Takeshi Oi ,  Kazuhiro Tada ,  Shiori Idaka ,  Shigeru Hasegawa ,  Takeshi Tanaka

发明人： Yasushi Nakayama ,  Takayoshi Miki ,  Takeshi Oi ,  Kazuhiro Tada ,  Shiori Idaka ,  Shigeru Hasegawa ,  Takeshi Tanaka

IPC分类号： H01L29/24 ,  H01L29/16 ,  H01L29/20

CPC分类号： H01L25/18 ,  H01L23/24 ,  H01L23/3135 ,  H01L23/3735 ,  H01L24/48 ,  H01L24/49 ,  H01L25/072 ,  H01L29/1608 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48227 ,  H01L2224/49111 ,  H01L2224/49175 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/10253 ,  H01L2924/10254 ,  H01L2924/10272 ,  H01L2924/1033 ,  H01L2924/12031 ,  H01L2924/12032 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/15311 ,  H01L2924/19107 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A power semiconductor module in which temperature rise of switching elements made of a Si semiconductor can be suppressed low and efficiency of cooling the module can be enhanced. To that end, the power semiconductor module includes switching elements made of the Si semiconductor and diodes made of a wide-bandgap semiconductor, the diodes are arranged in the middle region of the power semiconductor module, and the switching elements are arranged in both sides or in the periphery of the middle region of the power semiconductor module.

摘要翻译： 可以抑制由Si半导体构成的开关元件的温度上升的功率半导体模块，并且可以提高冷却模块的效率。 为此，功率半导体模块包括由Si半导体制成的开关元件和由宽带隙半导体制成的二极管，二极管被布置在功率半导体模块的中间区域中，并且开关元件布置在两侧或 在功率半导体模块的中间区域的外围。

公开(公告)号：US20120252535A1

公开(公告)日：2012-10-04

申请号：US13417640

申请日：2012-03-12

申请人： Yoshifumi KAJIWARA ,  Hiroyuki TAKITA ,  Takashi SUZUKI ,  Kazuhiro TADA ,  Hiroshi KUBO

发明人： Yoshifumi KAJIWARA ,  Hiroyuki TAKITA ,  Takashi SUZUKI ,  Kazuhiro TADA ,  Hiroshi KUBO

IPC分类号： H04R1/02 ,  H04W88/02 ,  H04M1/02

CPC分类号： H04M1/0277 ,  H04M1/0235 ,  H04M1/0266 ,  H04M1/03

摘要： An electronic apparatus includes: a housing having a liquid crystal display section mounted in the housing; a space section formed between an end side in the housing and the liquid crystal display section; and a circuit unit having an antenna pattern, a microphone, and one or plurality of mounting components being mounted on one or both of the front and rear surface sides of the circuit unit arranged in the space section.

摘要翻译： 电子设备包括：具有安装在壳体中的液晶显示部分的壳体; 在所述壳体的端侧与所述液晶显示部之间形成的间隔部; 以及具有天线图案，麦克风和一个或多个安装部件的电路单元，其安装在布置在空间部分中的电路单元的前表面侧和后表面侧的一个或两个上。

公开(公告)号：US20120247992A1

公开(公告)日：2012-10-04

申请号：US13427578

申请日：2012-03-22

申请人： Takashi SUZUKI ,  Yoshifumi KAJIWARA ,  Hiroyuki TAKITA ,  Kazuhiro TADA ,  Hiroshi KUBO

发明人： Takashi SUZUKI ,  Yoshifumi KAJIWARA ,  Hiroyuki TAKITA ,  Kazuhiro TADA ,  Hiroshi KUBO

IPC分类号： B65D85/00

CPC分类号： G06F1/1624 ,  H04M1/0237

摘要： An electronic apparatus includes: a first casing; a second casing; a support member, disposed on the second casing, to support the first casing; a slide rail, engaged with the support member, to support the first casing such that the first casing becomes slidable; and a slide stopper, disposed on the slide rail, to include a stopper surface for the support member and a projecting portion that separates a first end side of the first casing from the second casing.

摘要翻译： 电子设备包括：第一壳体; 第二套 支撑构件，设置在所述第二壳体上，以支撑所述第一壳体; 与所述支撑构件接合的滑轨，以支撑所述第一壳体，使得所述第一壳体可滑动; 以及滑动止动件，其设置在所述滑轨上，以包括用于所述支撑构件的止动面和将所述第一壳体的第一端侧与所述第二壳体分离的突出部。

公开(公告)号：US4904793A

公开(公告)日：1990-02-27

申请号：US95833

申请日：1987-09-14

申请人： Takaharu Ikeda ,  Kazuhiro Tada

发明人： Takaharu Ikeda ,  Kazuhiro Tada

IPC分类号： C07D249/08 ,  C07D521/00

CPC分类号： C07D231/12 ,  C07D233/56 ,  C07D249/08

摘要： A triazole compound of the formula: ##STR1## wherein X is a hydrogen atom or a chlorine atom, which can be produced by subjecting an aromatic aldehyde of the formula: ##STR2## wherein X is as defined above, an alpha-halopinacolone of the formula: ##STR3## wherein Hal is a chlorine atom or a bromine atom and 1,2,4-triazole to condensation in the presence of an alkali, is useful as an intermediate in the synthesis of anti-microbial triazole-alcohols with high purity and high yield.

摘要翻译： 下式的三唑化合物：其中X是氢原子或氯原子，其可以通过使下式的芳族醛进行制备：其中X如上定义，其中X如上定义，α-卤代新戊酸钠 式：其中Hal是氯原子或溴原子和1,2,4-三唑在碱存在下缩合，可用作合成具有高纯度的抗微生物三唑醇的中间体 产量高。

公开(公告)号：US08894242B2

公开(公告)日：2014-11-25

申请号：US13426858

申请日：2012-03-22

申请人： Kazuhiro Tada ,  Yoshifumi Kajiwara ,  Takashi Suzuki ,  Hiroyuki Takita ,  Hiroshi Kubo

发明人： Kazuhiro Tada ,  Yoshifumi Kajiwara ,  Takashi Suzuki ,  Hiroyuki Takita ,  Hiroshi Kubo

IPC分类号： F21V29/00 ,  H04M1/22 ,  H04M1/00 ,  H04M1/18 ,  H04M19/04 ,  F21V8/00

CPC分类号： H04M19/048 ,  G02B6/0016 ,  H04M1/18 ,  H04M1/22

摘要： An electronic apparatus includes a light source; a casing that accommodates the light source and includes a first window transmitting light from the light source; a water inhibitor that is formed from a circumferential wall and a window seal in a monoblock form, the circumferential wall being disposed along a inner circumference of the casing and preventing invasion of water from the circumference of the casing into the casing, the window seal being disposed inside the first window and preventing invasion of water from the first window into the casing, the water inhibitor preventing invasion of water into the casing and transmitting the light from the first window to a outside of the casing; and a light guide member that is disposed over the first window and guides the light transmitted through the first window.

摘要翻译： 电子设备包括光源; 容纳光源并且包括从光源透射光的第一窗口的壳体; 防水剂，其由圆周壁和窗口密封形成为整体形式，所述周壁沿着所述壳体的内周设置，并且防止水从所述壳体的周边侵入到所述壳体中，所述窗口密封是 设置在第一窗口内部并防止水从第一窗口侵入壳体中，防水剂防止水侵入壳体并将光从第一窗口传输到壳体的外部; 以及导光构件，其设置在所述第一窗口上方并且引导透过所述第一窗口的光。

公开(公告)号：US20130181225A1

公开(公告)日：2013-07-18

申请号：US13619353

申请日：2012-09-14

申请人： Seiji OKA ,  Kazuhiro TADA ,  Hiroshi YOSHIDA

发明人： Seiji OKA ,  Kazuhiro TADA ,  Hiroshi YOSHIDA

IPC分类号： H01L21/304 ,  H01L21/78 ,  H01L29/02

CPC分类号： H01L21/3043 ,  H01L21/561 ,  H01L21/78 ,  H01L23/142 ,  H01L23/3121 ,  H01L23/49811 ,  H01L24/48 ,  H01L24/49 ,  H01L24/97 ,  H01L25/072 ,  H01L25/50 ,  H01L29/02 ,  H01L2224/48227 ,  H01L2224/49111 ,  H01L2224/49113 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/181 ,  H01L2224/45099 ,  H01L2224/85 ,  H01L2924/00

摘要： A semiconductor device includes a metal substrate including a metal base plate, an insulating sheet located on the metal base plate, and a wiring pattern located on the insulating sheet, and a semiconductor element located on the metal substrate. The semiconductor element is sealed with a molding resin. The molding resin extends to side surfaces of the metal substrate. On the side surfaces of the metal substrate, the insulating sheet and the wiring pattern are not exposed from the molding resin, whereas the metal base plate includes a projecting portion exposed from the molding resin.

摘要翻译： 半导体器件包括金属基板，其包括金属基板，位于金属基板上的绝缘片和位于绝缘片上的布线图案，以及位于金属基板上的半导体元件。 半导体元件用模制树脂密封。 成型树脂延伸到金属基板的侧表面。 在金属基板的侧面上，绝缘片和布线图案不会从模制树脂露出，而金属基板包括从模制树脂露出的突出部分。