发明申请
- 专利标题： TUNNEL FIELD EFFECT TRANSISTOR
- 专利标题（中）： 隧道场效应晶体管
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申请号： US13558518申请日： 2012-07-26
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公开(公告)号： US20120286350A1公开(公告)日： 2012-11-15
- 发明人: Bruce B. Doris , Kangguo Cheng , Wilfried E. Haensch , Ali Khakifirooz , Isaac Lauer , Ghavam G. Shahidi
- 申请人： Bruce B. Doris , Kangguo Cheng , Wilfried E. Haensch , Ali Khakifirooz , Isaac Lauer , Ghavam G. Shahidi
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L29/78
- IPC分类号： H01L29/78
摘要：
An FET device characterized as being an asymmetrical tunnel FET (TFET) is disclosed. The TFET includes a gate-stack, a channel region underneath the gate-stack, a first and a second junction adjoining the gate-stack and being capable for electrical continuity with the channel. The first junction and the second junction are of different conductivity types. The TFET also includes spacer formations in a manner that the spacer formation on one side of the gate-stack is thinner than on the other side.
公开/授权文献
- US08766353B2 Tunnel field effect transistor 公开/授权日：2014-07-01
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