发明申请
- 专利标题: FABRICATION METHOD OF SEMICONDUCTOR DEVICE
- 专利标题(中): 半导体器件的制造方法
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申请号: US13557674申请日: 2012-07-25
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公开(公告)号: US20120289012A1公开(公告)日: 2012-11-15
- 发明人: Seiji Momota , Takeshi Fujii , Satoshi Kamijima , Makoto Asai
- 申请人: Seiji Momota , Takeshi Fujii , Satoshi Kamijima , Makoto Asai
- 申请人地址: JP Kariya-city JP Kawasaki-shi
- 专利权人: DENSO CORPORATION,FUJI ELECTRIC CO., LTD.
- 当前专利权人: DENSO CORPORATION,FUJI ELECTRIC CO., LTD.
- 当前专利权人地址: JP Kariya-city JP Kawasaki-shi
- 优先权: JP2010-037535 20100223
- 主分类号: H01L21/336
- IPC分类号: H01L21/336
摘要:
A semiconductor device includes a first semiconductor region of a first conductivity type; a second semiconductor region of a second conductivity type, disposed on a surface of the first semiconductor region, and having an impurity concentration higher than that of the first semiconductor region; a trench that penetrates the second semiconductor region to reach the first semiconductor region; a first electrode disposed inside the trench via an insulating film; a first recess portion disposed deeper than an upper end of the first electrode, in a surface layer of the second semiconductor region, so as to be in contact with the trench; and a second electrode embedded in the first recess portion.
公开/授权文献
- US08691635B2 Fabrication method of semiconductor device 公开/授权日:2014-04-08
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