公开(公告)号：US08691635B2

公开(公告)日：2014-04-08

申请号：US13557674

申请日：2012-07-25

申请人： Seiji Momota ,  Takeshi Fujii ,  Satoshi Kamijima ,  Makoto Asai

发明人： Seiji Momota ,  Takeshi Fujii ,  Satoshi Kamijima ,  Makoto Asai

IPC分类号： H01L29/417 ,  H01L29/66 ,  H01L29/739 ,  H01L29/78

CPC分类号： H01L29/7802 ,  H01L29/41766 ,  H01L29/66348 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7397 ,  H01L29/7813

摘要： A semiconductor device includes a first semiconductor region of a first conductivity type; a second semiconductor region of a second conductivity type, disposed on a surface of the first semiconductor region, and having an impurity concentration higher than that of the first semiconductor region; a trench that penetrates the second semiconductor region to reach the first semiconductor region; a first electrode disposed inside the trench via an insulating film; a first recess portion disposed deeper than an upper end of the first electrode, in a surface layer of the second semiconductor region, so as to be in contact with the trench; and a second electrode embedded in the first recess portion.

摘要翻译： 半导体器件包括第一导电类型的第一半导体区域; 第二导电类型的第二半导体区域，设置在第一半导体区域的表面上，杂质浓度高于第一半导体区域; 穿过第二半导体区域到达第一半导体区域的沟槽; 经由绝缘膜设置在所述沟槽内的第一电极; 在所述第二半导体区域的表面层中设置为比所述第一电极的上端深的第一凹部，以与所述沟槽接触; 以及嵌入在第一凹部中的第二电极。

公开(公告)号：US20120289012A1

公开(公告)日：2012-11-15

申请号：US13557674

申请日：2012-07-25

申请人： Seiji Momota ,  Takeshi Fujii ,  Satoshi Kamijima ,  Makoto Asai

发明人： Seiji Momota ,  Takeshi Fujii ,  Satoshi Kamijima ,  Makoto Asai

IPC分类号： H01L21/336

CPC分类号： H01L29/7802 ,  H01L29/41766 ,  H01L29/66348 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7397 ,  H01L29/7813

摘要： A semiconductor device includes a first semiconductor region of a first conductivity type; a second semiconductor region of a second conductivity type, disposed on a surface of the first semiconductor region, and having an impurity concentration higher than that of the first semiconductor region; a trench that penetrates the second semiconductor region to reach the first semiconductor region; a first electrode disposed inside the trench via an insulating film; a first recess portion disposed deeper than an upper end of the first electrode, in a surface layer of the second semiconductor region, so as to be in contact with the trench; and a second electrode embedded in the first recess portion.

摘要翻译： 半导体器件包括第一导电类型的第一半导体区域; 第二导电类型的第二半导体区域，设置在第一半导体区域的表面上，杂质浓度高于第一半导体区域; 穿过第二半导体区域到达第一半导体区域的沟槽; 经由绝缘膜设置在所述沟槽内的第一电极; 在所述第二半导体区域的表面层中设置为比所述第一电极的上端深的第一凹部，以与所述沟槽接触; 以及嵌入在第一凹部中的第二电极。

公开(公告)号：US08253222B2

公开(公告)日：2012-08-28

申请号：US13027792

申请日：2011-02-15

申请人： Seiji Momota ,  Takeshi Fujii ,  Satoshi Kamijima ,  Makoto Asai

发明人： Seiji Momota ,  Takeshi Fujii ,  Satoshi Kamijima ,  Makoto Asai

IPC分类号： H01L29/41

CPC分类号： H01L29/7802 ,  H01L29/41766 ,  H01L29/66348 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7397 ,  H01L29/7813

摘要： A semiconductor device includes a first semiconductor region of a first conductivity type; a second semiconductor region of a second conductivity type, disposed on a surface of the first semiconductor region, and having an impurity concentration higher than that of the first semiconductor region; a trench that penetrates the second semiconductor region to reach the first semiconductor region; a first electrode disposed inside the trench via an insulating film; a first recess portion disposed deeper than an upper end of the first electrode, in a surface layer of the second semiconductor region, so as to be in contact with the trench; and a second electrode embedded in the first recess portion.

摘要翻译： 半导体器件包括第一导电类型的第一半导体区域; 第二导电类型的第二半导体区域，设置在第一半导体区域的表面上，杂质浓度高于第一半导体区域; 穿过第二半导体区域到达第一半导体区域的沟槽; 经由绝缘膜设置在所述沟槽内的第一电极; 在所述第二半导体区域的表面层中设置为比所述第一电极的上端深的第一凹部，以与所述沟槽接触; 以及嵌入在第一凹部中的第二电极。

公开(公告)号：US20110204485A1

公开(公告)日：2011-08-25

申请号：US13027792

申请日：2011-02-15

申请人： Seiji Momota ,  Takeshi Fujii ,  Satoshi Kamijima ,  Makoto Asai

发明人： Seiji Momota ,  Takeshi Fujii ,  Satoshi Kamijima ,  Makoto Asai

IPC分类号： H01L29/41 ,  H01L21/76

CPC分类号： H01L29/7802 ,  H01L29/41766 ,  H01L29/66348 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7397 ,  H01L29/7813

摘要： A semiconductor device includes a first semiconductor region of a first conductivity type; a second semiconductor region of a second conductivity type, disposed on a surface of the first semiconductor region, and having an impurity concentration higher than that of the first semiconductor region; a trench that penetrates the second semiconductor region to reach the first semiconductor region; a first electrode disposed inside the trench via an insulating film; a first recess portion disposed deeper than an upper end of the first electrode, in a surface layer of the second semiconductor region, so as to be in contact with the trench; and a second electrode embedded in the first recess portion.

摘要翻译： 半导体器件包括第一导电类型的第一半导体区域; 第二导电类型的第二半导体区域，设置在第一半导体区域的表面上，杂质浓度高于第一半导体区域; 穿过第二半导体区域到达第一半导体区域的沟槽; 经由绝缘膜设置在所述沟槽内的第一电极; 在所述第二半导体区域的表面层中设置为比所述第一电极的上端深的第一凹部，以与所述沟槽接触; 以及嵌入在第一凹部中的第二电极。