Generally, the present disclosure is directed to methods for forming embedded stressor regions in semiconductor devices such as transistor elements and the like. One illustrative method disclosed herein includes forming a first material in first cavities formed in a first active area adjacent to a first channel region of a semiconductor device, wherein the first material induces a first stress in the first channel region. The method also includes, among other things, forming a second material in second cavities formed in a second active area adjacent to a second channel region of the semiconductor device, wherein the second material induces a second stress in the second channel region that is of an opposite type of the first stress in the first channel region, and wherein the first and second cavities are formed during a common etch process.