发明申请
- 专利标题： MEMORY WITH DISCRETE STORAGE ELEMENTS
- 专利标题（中）： 具有分离存储元素的记忆
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申请号： US13111580申请日： 2011-05-19
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公开(公告)号： US20120292683A1公开(公告)日： 2012-11-22
- 发明人: Konstantin V. Loiko , Brian A. Winstead , Mehul D. Shroff
- 申请人： Konstantin V. Loiko , Brian A. Winstead , Mehul D. Shroff
- 主分类号： H01L29/788
- IPC分类号： H01L29/788 ; B82Y99/00
摘要：
A method of making a non-volatile memory cell includes forming a plurality of discrete storage elements. A tensile dielectric layer is formed among the discrete storage elements and provides lateral tensile stress to the discrete storage elements. A gate is formed over the discrete storage elements.
公开/授权文献
- US09202930B2 Memory with discrete storage elements 公开/授权日：2015-12-01
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