发明申请
- 专利标题： TRANSPARENT CONDUCTIVE FILM, PROCESS FOR PRODUCING SAME, AND ELECTRONIC DEVICE EMPLOYING TRANSPARENT CONDUCTIVE FILM
- 专利标题（中）： 透明导电膜，其制造方法和使用透明导电膜的电子器件
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申请号： US13576708申请日： 2011-03-25
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公开(公告)号： US20120295120A1公开(公告)日： 2012-11-22
- 发明人: Koichi Nagamoto , Takeshi Kondo , Yuta Suzuki , Wataru Iwaya , Satoshi Naganawa
- 申请人： Koichi Nagamoto , Takeshi Kondo , Yuta Suzuki , Wataru Iwaya , Satoshi Naganawa
- 申请人地址： JP Tokyo
- 专利权人： LINTEC CORPORATION
- 当前专利权人： LINTEC CORPORATION
- 当前专利权人地址： JP Tokyo
- 优先权： JP2010-084522 20100331
- 国际申请： PCT/JP2011/057459 WO 20110325
- 主分类号： B32B9/04
- IPC分类号： B32B9/04 ; C23C14/08 ; H01B5/14
摘要：
Disclosed is a transparent conductive film, including a substrate and, formed on at least one surface of the substrate, a gas barrier layer and a transparent conductive layer, wherein the gas barrier layer is formed of a material containing at least oxygen atoms, nitrogen atoms, and silicon atoms, and includes a surface layer part which has an oxygen atom fraction of 60 to 75%, a nitrogen atom fraction of 0 to 10%, and a silicon atom fraction of 25 to 35%, each atom fraction being calculated with respect to the total number of the oxygen atoms, nitrogen atoms, and silicon atoms contained in the surface layer part and which has a film density of 2.4 to 4.0 g/cm3.