发明申请
- 专利标题： METHODS OF FABRICATING DEVICES BY LOW PRESSURE COLD WELDING
- 专利标题（中）： 通过低压冷焊制造设备的方法
-
申请号： US13525539申请日： 2012-06-18
-
公开(公告)号： US20120295425A1公开(公告)日： 2012-11-22
- 发明人: Changsoon KIM , Stephen R. FORREST
- 申请人： Changsoon KIM , Stephen R. FORREST
- 主分类号： H01L21/20
- IPC分类号： H01L21/20
摘要：
Methods of transferring a metal and/or organic layer from a patterned stamp, preferably a soft, elastomeric stamp, to a substrate are provided. The patterned metal or organic layer may be used for example, in a wide range of electronic devices. The present methods are particularly suitable for nanoscale patterning of organic electronic components.
公开/授权文献
- US08637345B2 Methods of fabricating devices by low pressure cold welding 公开/授权日：2014-01-28
信息查询
IPC分类:
