发明申请
- 专利标题： TECHNIQUES FOR FORMING 3D STRUCTURES
- 专利标题（中）： 形成三维结构的技术
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申请号： US13472329申请日： 2012-05-15
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公开(公告)号： US20120295444A1公开(公告)日： 2012-11-22
- 发明人: Ludovic Godet , Christopher R. Hatem , George D. Papasouliotis
- 申请人： Ludovic Godet , Christopher R. Hatem , George D. Papasouliotis
- 申请人地址： US MA Gloucester
- 专利权人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
- 当前专利权人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
- 当前专利权人地址： US MA Gloucester
- 主分类号： H01L21/306
- IPC分类号： H01L21/306
摘要：
A technique for forming 3D structures is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for forming 3D structures. The method may comprise providing a substrate comprising at least two vertically extending fins that are spaced apart from one another to define a trench; depositing a dielectric material in the trench between the at least two vertically extending fins; providing an etch stop layer within the dielectric material, the etch stop layer having a first side and a second opposite side; removing the dielectric material near the first side of the etch stop layer.
公开/授权文献
- US09240350B2 Techniques for forming 3D structures 公开/授权日：2016-01-19
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