发明申请
- 专利标题： SEMICONDUCTOR LIGHT EMITTING DEVICE, NITRIDE SEMICONDUCTOR LAYER, AND METHOD FOR FORMING NITRIDE SEMICONDUCTOR LAYER
- 专利标题（中）： 半导体发光器件，氮化物半导体层和形成氮化物半导体层的方法
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申请号： US13406770申请日： 2012-02-28
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公开(公告)号： US20120298952A1公开(公告)日： 2012-11-29
- 发明人: Toshiki HIKOSAKA , Yoshiyuki HARADA , Maki SUGAI , Shinya NUNOUE
- 申请人： Toshiki HIKOSAKA , Yoshiyuki HARADA , Maki SUGAI , Shinya NUNOUE
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 优先权： JP2011-115584 20110524
- 主分类号： H01L33/06
- IPC分类号： H01L33/06 ; H01L21/20 ; H01L29/38
摘要：
According to an embodiment, a semiconductor light emitting device includes a foundation layer, a first semiconductor layer, a light emitting layer, and a second semiconductor layer. The foundation layer has an unevenness having recesses, side portions, and protrusions. A first major surface of the foundation layer has an overlay-region. The foundation layer has a plurality of dislocations including first dislocations whose one ends reaching the recess and second dislocations whose one ends reaching the protrusion. A proportion of a number of the second dislocations reaching the first major surface to a number of all of the second dislocations is smaller than a proportion of a number of the first dislocations reaching the first major surface to a number of all of the first dislocations. A number of the dislocations reaching the overlay-region of the first major surface is smaller than a number of all of the first dislocations.