发明申请
US20120300533A1 NONVOLATILE MEMORY CELL OPERATING BY INCREASING ORDER IN POLYCRYSTALLINE SEMICONDUCTOR MATERIAL
有权
通过在多晶半导体材料中增加订单来操作非易失性存储器单元
- 专利标题： NONVOLATILE MEMORY CELL OPERATING BY INCREASING ORDER IN POLYCRYSTALLINE SEMICONDUCTOR MATERIAL
- 专利标题（中）： 通过在多晶半导体材料中增加订单来操作非易失性存储器单元
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申请号： US13568834申请日： 2012-08-07
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公开(公告)号： US20120300533A1公开(公告)日： 2012-11-29
- 发明人: S. Brad Herner , Abhijit Bandyopadhyay
- 申请人： S. Brad Herner , Abhijit Bandyopadhyay
- 主分类号： G11C11/00
- IPC分类号： G11C11/00 ; H01L27/26 ; H01L47/00
摘要：
A memory cell is provided that includes a first conductor, a second conductor, and a semiconductor junction diode between the first and second conductors. The semiconductor junction diode is not in contact with a material having a lattice mismatch of less than 12 percent with the semiconductor junction diode. In addition, no resistance-switching element having its resistance changed by application of a programming voltage by more than a factor of two is disposed between the semiconductor junction diode and the first conductor or between the semiconductor junction diode and the second conductor. Numerous other aspects are provided.
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