发明申请
US20120300568A1 Method of Refreshing a Memory Device, Refresh Address Generator and Memory Device
有权
刷新存储器件,刷新地址生成器和存储器件的方法
- 专利标题: Method of Refreshing a Memory Device, Refresh Address Generator and Memory Device
- 专利标题(中): 刷新存储器件,刷新地址生成器和存储器件的方法
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申请号: US13240049申请日: 2011-09-22
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公开(公告)号: US20120300568A1公开(公告)日: 2012-11-29
- 发明人: Chul-Woo Park , Joo-Sun Choi , Hong-Sun Hwang
- 申请人: Chul-Woo Park , Joo-Sun Choi , Hong-Sun Hwang
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 优先权: KR10-2011-0049579 20110525
- 主分类号: G11C11/402
- IPC分类号: G11C11/402
摘要:
A refresh address is generated with a refresh period for refreshing a memory device with refresh leveraging. A respective refresh is performed on a weak cell having a first address when the refresh address is a second address instead of on a first strong cell having the second address. A respective refresh is performed on one of the first strong cell or a second strong cell having a third address when the refresh address is the third address. Address information is stored for only one of the first, second, and third addresses such that memory capacity may be reduced. In alternative aspects, a respective refresh is performed on one of a weak cell, a first strong cell, or a second strong cell depending on a flag when the refresh address is any of at least one predetermined address to result in refresh leveraging.