发明申请
- 专利标题: BACK SIDE ILLUMINATION IMAGE SENSOR REDUCED IN SIZE AND METHOD FOR MANUFACTURING THE SAME
- 专利标题(中): 尺寸缩小的背面照明图像传感器及其制造方法
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申请号: US13563655申请日: 2012-07-31
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公开(公告)号: US20120301996A1公开(公告)日: 2012-11-29
- 发明人: In-Gyun Jeon , Se-Jung Oh , Heui-Gyun Ahn , Jun-Ho Won
- 申请人: In-Gyun Jeon , Se-Jung Oh , Heui-Gyun Ahn , Jun-Ho Won
- 申请人地址: KR Seoul
- 专利权人: SILICONFILE TECHNOLOGIES INC.
- 当前专利权人: SILICONFILE TECHNOLOGIES INC.
- 当前专利权人地址: KR Seoul
- 优先权: KR10-2009-0132790 20091229
- 主分类号: H01L31/18
- IPC分类号: H01L31/18
摘要:
A back side illumination image sensor reduced in chip size has a capacitor disposed in a vertical upper portion of a pixel region in the back side illumination image sensor in which light is illuminated from a back side of a subscriber, thereby reducing a chip size, and a method for manufacturing the back side illumination image sensor. The capacitor of the back side illumination image sensor reduced in chip size is formed in the vertical upper portion of the pixel region, not in the outside of a pixel region, so that the outside area of the pixel region for forming the capacitor is not required, thereby reducing a chip size.
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