公开(公告)号：US08368158B2

公开(公告)日：2013-02-05

申请号：US12758646

申请日：2010-04-12

申请人： In-Gyun Jeon ,  Se-Jung Oh ,  Heui-Gyun Ahn ,  Jun-Ho Won

发明人： In-Gyun Jeon ,  Se-Jung Oh ,  Heui-Gyun Ahn ,  Jun-Ho Won

IPC分类号： H01L31/0232

CPC分类号： H01L27/14627 ,  H01L27/14621 ,  H01L27/14632 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14687

摘要： An image sensor having a wave guide includes a semiconductor substrate formed with a photodiode and a peripheral circuit region; an anti-reflective layer formed on the semiconductor substrate; an insulation layer formed on the anti-reflective layer; a wiring layer formed on the insulation layer and connected to the semiconductor substrate; at least one interlayer dielectric stacked on the wiring layer; and a wave guide connected to the insulation layer by passing through the interlayer dielectric and the wiring layer which are formed over the photodiode.

摘要翻译： 具有波导的图像传感器包括形成有光电二极管和外围电路区域的半导体基板; 形成在半导体衬底上的抗反射层; 形成在所述抗反射层上的绝缘层; 形成在所述绝缘层上并连接到所述半导体衬底的布线层; 堆叠在所述布线层上的至少一层间电介质; 以及通过穿过形成在光电二极管上的层间电介质和布线层与绝缘层连接的波导。

公开(公告)号：US20120301996A1

公开(公告)日：2012-11-29

申请号：US13563655

申请日：2012-07-31

申请人： In-Gyun Jeon ,  Se-Jung Oh ,  Heui-Gyun Ahn ,  Jun-Ho Won

发明人： In-Gyun Jeon ,  Se-Jung Oh ,  Heui-Gyun Ahn ,  Jun-Ho Won

IPC分类号： H01L31/18

CPC分类号： H01L27/1464 ,  H01L27/14634

摘要： A back side illumination image sensor reduced in chip size has a capacitor disposed in a vertical upper portion of a pixel region in the back side illumination image sensor in which light is illuminated from a back side of a subscriber, thereby reducing a chip size, and a method for manufacturing the back side illumination image sensor. The capacitor of the back side illumination image sensor reduced in chip size is formed in the vertical upper portion of the pixel region, not in the outside of a pixel region, so that the outside area of the pixel region for forming the capacitor is not required, thereby reducing a chip size.

摘要翻译： 减小芯片尺寸的背面照明图像传感器具有设置在后侧照明图像传感器中的像素区域的垂直上部的电容器，其中光从用户的背面被照射，从而减小了芯片尺寸，并且 背面照明图像传感器的制造方法。 减少芯片尺寸的背面照明图像传感器的电容器形成在像素区域的垂直上部，而不是在像素区域的外侧，使得不需要用于形成电容器的像素区域的外部区域 ，从而减小芯片尺寸。

公开(公告)号：US20120295389A1

公开(公告)日：2012-11-22

申请号：US13563620

申请日：2012-07-31

申请人： In-Gyun JEON ,  Se-Jung OH ,  Heui-Gyun AHN ,  Jun-Ho WON

发明人： In-Gyun JEON ,  Se-Jung OH ,  Heui-Gyun AHN ,  Jun-Ho WON

IPC分类号： H01L31/0232

CPC分类号： H01L27/14627 ,  H01L27/14621 ,  H01L27/14632 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14687

摘要： An image sensor having a wave guide includes a semiconductor substrate formed with a photodiode and a peripheral circuit region; an anti-reflective layer formed on the semiconductor substrate; an insulation layer formed on the anti-reflective layer; a wiring layer formed on the insulation layer and connected to the semiconductor substrate; at least one interlayer dielectric stacked on the wiring layer; and a wave guide connected to the insulation layer by passing through the interlayer dielectric and the wiring layer which are formed over the photodiode.

摘要翻译： 具有波导的图像传感器包括形成有光电二极管和外围电路区域的半导体基板; 形成在半导体衬底上的抗反射层; 形成在所述抗反射层上的绝缘层; 形成在所述绝缘层上并连接到所述半导体衬底的布线层; 堆叠在所述布线层上的至少一层间电介质; 以及通过穿过形成在光电二极管上的层间电介质和布线层与绝缘层连接的波导。

公开(公告)号：US07510896B2

公开(公告)日：2009-03-31

申请号：US11580387

申请日：2006-10-12

申请人： In Gyun Jeon

发明人： In Gyun Jeon

IPC分类号： H01L21/00

CPC分类号： H01L27/14643 ,  H01L27/14609

摘要： Disclosed are a CMOS image sensor and a method for manufacturing the same, capable of improving the characteristics of the image sensor by increasing junction capacitance of a floating diffusion area. The CMOS image sensor generally includes a photodiode and a plurality of transistors (e.g., transfer, reset, drive, and select transistors), a first conductive type semiconductor substrate, having an active area including a photodiode area, a floating diffusion area, and a voltage input/output area, a gate electrode of each transistor on the active area, a first conductive type first well area in the semiconductor substrate corresponding to the voltage input/output area, a first conductive type second well area in the semiconductor substrate corresponding to the floating diffusion area, and a second conductive type diffusion area in the semiconductor substrate at opposed sides of each gate electrode.

摘要翻译： 公开了一种CMOS图像传感器及其制造方法，能够通过增加浮动扩散区域的结电容来改善图像传感器的特性。 CMOS图像传感器通常包括光电二极管和多个晶体管（例如，传输，复位，驱动和选择晶体管），第一导电类型半导体衬底，其具有包括光电二极管区域，浮动扩散区域和 电压输入/输出区域，有源区域上的每个晶体管的栅电极，对应于电压输入/输出区域的半导体衬底中的第一导电类型的第一阱区域，对应于半导体衬底中的第一导电类型第二阱区域 浮动扩散区域和在每个栅电极的相对侧的半导体衬底中的第二导电型扩散区域。

公开(公告)号：US07507597B2

公开(公告)日：2009-03-24

申请号：US11448435

申请日：2006-06-07

申请人： In Gyun Jeon

发明人： In Gyun Jeon

IPC分类号： H01L31/113

CPC分类号： H01L27/14689 ,  H01L27/14601

摘要： A method of fabricating a CMOS image sensor is provided. The fabricating method includes: forming a gate electrode with a gate insulating layer interposed at a transistor region of a semiconductor substrate having an active region defined by a photodiode region and a transistor region; forming a first impurity region of a first conductive type at the transistor region of one side of the gate electrode; forming a first sidewall and a second sidewall at both sides of the gate electrode; forming a second impurity region of the first conductive type at the transistor region of the one side of the gate electrode; applying a photoresist layer on the semiconductor substrate, and patterning the photoresist layer to cover the transistor region through an exposing and developing process; forming a third impurity region of a second conductive type at the photodiode region using the patterned photoresist as a mask; selectively removing the first sidewall insulating layer between the second sidewall insulating layer and the gate electrode at a predetermined thickness using the patterned photoresist layer as a mask; covering the gate electrode by reflowing the patterned photoresist layer at a predetermined temperature; selectively removing the second sidewall insulating layer using the reflowed photoresist layer as a mask; and forming a fourth impurity region of the first conductive type at the side of the gate electrode where the third impurity region is formed using the reflowed photoresist layer as a mask.

摘要翻译： 提供一种制造CMOS图像传感器的方法。 制造方法包括：形成栅电极，其栅极绝缘层插入在具有由光电二极管区域和晶体管区域限定的有源区域的半导体衬底的晶体管区域处; 在栅电极的一侧的晶体管区域形成第一导电类型的第一杂质区; 在所述栅电极的两侧形成第一侧壁和第二侧壁; 在栅电极的一侧的晶体管区域形成第一导电类型的第二杂质区; 在半导体衬底上施加光致抗蚀剂层，并通过曝光和显影工艺图案化光致抗蚀剂层以覆盖晶体管区域; 在所述光电二极管区域处使用所述图案化的光致抗蚀剂作为掩模形成第二导电类型的第三杂质区域; 使用图案化的光致抗蚀剂层作为掩模，以预定厚度选择性地去除第二侧壁绝缘层和栅电极之间的第一侧壁绝缘层; 通过在预定温度下回流图案化的光致抗蚀剂层来覆盖栅电极; 使用回流光致抗蚀剂层作为掩模选择性地去除第二侧壁绝缘层; 以及使用回流光致抗蚀剂层作为掩模，在形成有第三杂质区域的栅电极侧形成第一导电类型的第四杂质区。

公开(公告)号：US07491991B2

公开(公告)日：2009-02-17

申请号：US11448426

申请日：2006-06-07

申请人： In Gyun Jeon

发明人： In Gyun Jeon

IPC分类号： H01L21/00

CPC分类号： H01L27/14643 ,  H01L27/14689

摘要： A method for fabricating a CMOS image sensor is provided. The method includes: forming a gate electrode with a gate insulating layer interposed on a transistor region of a semiconductor substrate having an active region defined by a photo diode and a transistor region; forming a first impurity region of a first conductive type at a transistor region at one side of the gate electrode; forming a second impurity region of a first conductive type at a photo diode region at other side of the gate electrode; forming sidewall insulating layers at both sides of the gate electrode; forming a third impurity region of a first conductive type at one side of a gate electrode where the first impurity region is formed; and forming a fourth impurity region of a second conductive type at the gate electrode, the photodiode region and the transistor region by implanting impurity ions of a second conductive type on the entire surface of the semiconductor substrate.

摘要翻译： 提供了一种用于制造CMOS图像传感器的方法。 该方法包括：形成栅电极，其栅极绝缘层插入在具有由二极管和晶体管区域限定的有源区的半导体衬底的晶体管区域上; 在栅极一侧的晶体管区域形成第一导电类型的第一杂质区; 在栅电极的另一侧的光电二极管区域形成第一导电类型的第二杂质区; 在栅电极的两侧形成侧壁绝缘层; 在形成有第一杂质区的栅电极的一侧形成第一导电类型的第三杂质区; 以及通过在半导体衬底的整个表面上注入第二导电类型的杂质离子，在栅电极，光电二极管区域和晶体管区域形成第二导电类型的第四杂质区域。

公开(公告)号：US07432125B2

公开(公告)日：2008-10-07

申请号：US10954494

申请日：2004-10-01

申请人： In-Gyun Jeon

发明人： In-Gyun Jeon

IPC分类号： H01L21/00

CPC分类号： H01L27/14643 ,  H01L27/1463 ,  H01L27/14689

摘要： A CMOS image sensor-manufacturing method includes forming a photodiode on a substrate, forming an insulating layer over the substrate, forming a contact hole in the insulating layer, and forming a gate terminal over the insulating layer. The gate terminal is connected to the photodiode through the contact hole.

摘要翻译： CMOS图像传感器的制造方法包括在基板上形成光电二极管，在基板上形成绝缘层，在绝缘层上形成接触孔，在绝缘层上形成栅极端子。 栅极端子通过接触孔连接到光电二极管。

公开(公告)号：US20050263676A1

公开(公告)日：2005-12-01

申请号：US10954188

申请日：2004-10-01

申请人： In-Gyun Jeon

发明人： In-Gyun Jeon

IPC分类号： H01L27/00 ,  H01L27/146 ,  H01L31/00

CPC分类号： H01L27/14625 ,  H01L27/14603 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463

摘要： Disclosed are a complementary metal oxide semiconductor (CMOS) image sensor and a method for fabricating the same, which are capable of effectively preventing a cross talk effect. The CMOS image sensor includes a semiconductor substrate; device isolation regions provided on the semiconductor for defining device regions therebetween; photocharge generating portions provided on the device regions for receiving external light and for generating and storing electric charges; light concentrating portions provided over the photocharge generating portions for concentrating the external light onto corresponding photocharge generating portions; and cross talk preventing portions for preventing the light passing through the light concentrating portions from being incident onto adjacent photocharge generating portions.

摘要翻译： 公开了能够有效地防止串扰效应的互补金属氧化物半导体（CMOS）图像传感器及其制造方法。 CMOS图像传感器包括半导体衬底; 器件隔离区，设置在半导体上用于限定它们之间的器件区域; 设置在用于接收外部光并用于产生和存储电荷的装置区域上的光电荷产生部分; 设置在光电荷产生部分上的用于将外部光聚集到相应的光电荷产生部分上的光聚集部分; 以及用于防止通过聚光部分的光入射到相邻的光电荷产生部分上的串扰防止部分。

公开(公告)号：US20110207258A1

公开(公告)日：2011-08-25

申请号：US13026963

申请日：2011-02-14

申请人： Heui-Gyun Ahn ,  Se-Jung Oh ,  In-Gyun Jeon ,  Jun-Ho Won

发明人： Heui-Gyun Ahn ,  Se-Jung Oh ,  In-Gyun Jeon ,  Jun-Ho Won

IPC分类号： H01L31/0232 ,  H01L21/30 ,  H01L31/18

CPC分类号： H01L24/03 ,  H01L21/6835 ,  H01L23/481 ,  H01L24/05 ,  H01L27/1462 ,  H01L27/14636 ,  H01L27/1464 ,  H01L2221/68372 ,  H01L2224/05093 ,  H01L2924/01046 ,  H01L2924/01078

摘要： A method for forming a pad in a wafer with a three-dimensional stacking structure includes: (a) a first process of bonding a device wafer and a handling wafer; (b) a second process of thinning a back side of an Si substrate which is formed on the device wafer, after the first process; (c) a third process of forming an anti-reflective layer and a PMD (preferential metal deposition) dielectric layer, after the second process; (d) a fourth process of forming vias on back sides of super contacts which are formed on the Si substrate, after the third process; and (e) a fifth process of forming a pad, after the fourth process.

摘要翻译： 用于在具有三维堆叠结构的晶片中形成焊盘的方法包括：（a）接合器件晶片和处理晶片的第一工艺; （b）在第一工序之后，使形成在器件晶片上的Si衬底的背面变薄的第二工序; （c）在第二工序之后形成抗反射层和PMD（优先金属沉积）介质层的第三工艺; （d）在第三工序之后在Si衬底上形成的超级触点的背面上形成通孔的第四工序; 和（e）在第四处理之后形成垫的第五工序。

公开(公告)号：US07612395B2

公开(公告)日：2009-11-03

申请号：US11441295

申请日：2006-05-24

申请人： In Gyun Jeon

发明人： In Gyun Jeon

IPC分类号： H01L31/113

CPC分类号： H01L27/14685 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14643 ,  H01L27/14689 ,  H01L31/02162 ,  H01L31/0232

摘要： CMOS image sensors and methods for fabricating the same are disclosed. A disclosed CMOS image sensor comprises: a semiconductor substrate; a photo diode; a microlens located over the photo diode; and a color filter layer located over the microlens.

摘要翻译： 公开了CMOS图像传感器及其制造方法。 公开的CMOS图像传感器包括：半导体衬底; 光电二极管; 位于光电二极管上方的微透镜; 以及位于微透镜上方的滤色器层。