Invention Application
- Patent Title: SEMICONDUCTOR DEVICE WITH STRAINED CHANNEL AND METHOD OF FABRICATING THE SAME
- Patent Title (中): 具有应变通道的半导体器件及其制造方法
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Application No.: US13560577Application Date: 2012-07-27
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Publication No.: US20120302024A1Publication Date: 2012-11-29
- Inventor: Young-Ho LEE , Seung-Joon JEON , Tae-Hang AHN
- Applicant: Young-Ho LEE , Seung-Joon JEON , Tae-Hang AHN
- Applicant Address: KR Icheon-si
- Assignee: HYNIX SEMICONDUCTOR INC.
- Current Assignee: HYNIX SEMICONDUCTOR INC.
- Current Assignee Address: KR Icheon-si
- Priority: KR10-2008-0036010 20080418
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
A semiconductor device includes: a gate pattern over a substrate; recess patterns provided in the substrate at both sides of the gate pattern, each having a side surface extending below the gate pattern; and a source and a drain filling the recess patterns, and forming a strained channel under the gate pattern.
Public/Granted literature
- US08912068B2 Semiconductor device with strained channel and method of fabricating the same Public/Granted day:2014-12-16
Information query
IPC分类:
