发明申请
US20120305072A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND BACK-CONTACT SOLAR CELL
审中-公开
制造半导体器件和反接触太阳能电池的方法
- 专利标题： METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND BACK-CONTACT SOLAR CELL
- 专利标题（中）： 制造半导体器件和反接触太阳能电池的方法
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申请号： US13516057申请日： 2010-12-09
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公开(公告)号： US20120305072A1公开(公告)日： 2012-12-06
- 发明人: Shigeo Fujimori , Yoshiyuki Kitamura , Takashi Ando , Tetsuya Goto
- 申请人： Shigeo Fujimori , Yoshiyuki Kitamura , Takashi Ando , Tetsuya Goto
- 申请人地址： JP Tokyo
- 专利权人： Toray Industries, Inc.
- 当前专利权人： Toray Industries, Inc.
- 当前专利权人地址： JP Tokyo
- 优先权： JP2009-287155 20091218
- 国际申请： PCT/JP2010/072100 WO 20101209
- 主分类号： H01L31/18
- IPC分类号： H01L31/18 ; H01L31/0236 ; H01L31/0224
摘要：
A method is provided for manufacturing a semiconductor device, wherein a p-type region and/or n-type pattern is formed on a surface of a semiconductor substrate, including ejecting at least one of etching paste, masking paste, doping paste, and electrode paste from an ejecting orifice of a nozzle toward the surface of the semiconductor substrate to form beads formed of the paste between the semiconductor substrate and the ejecting orifice and moving the semiconductor substrate relative to the nozzle thereby the paste is applied to the surface of the semiconductor substrate in a stripe shape.
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