发明申请
- 专利标题: METHOD OF REDUCING STRIATION ON A SIDEWALL OF A RECESS
- 专利标题(中): 减少碰撞的障碍的方法
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申请号: US13149861申请日: 2011-05-31
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公开(公告)号: US20120305525A1公开(公告)日: 2012-12-06
- 发明人: Hsiu-Chun Lee , Yi-Nan Chen , Hsien-Wen Liu
- 申请人: Hsiu-Chun Lee , Yi-Nan Chen , Hsien-Wen Liu
- 主分类号: C23F1/00
- IPC分类号: C23F1/00 ; B05D3/10
摘要:
A method of reducing striation on a sidewall of a recess is provided. The method includes the steps of providing a substrate covered with a photoresist layer. Then, the photoresist layer is etched to form a patterned photoresist layer. Later, a repairing process is performed by treating the patterned photoresist layer with a repairing gas which is selected from the group consisting of CF4, HBr, O2 and He. Next, the substrate is etched by taking the patterned photoresist layer as a mask after the repairing process. Finally, the patterned photoresist layer is removed.