发明申请
US20120305771A1 Proximity Sensor Packaging Structure And Manufacturing Method Thereof 审中-公开
接近传感器封装结构及其制造方法

  • 专利标题: Proximity Sensor Packaging Structure And Manufacturing Method Thereof
  • 专利标题(中): 接近传感器封装结构及其制造方法
  • 申请号: US13578601
    申请日: 2011-02-10
  • 公开(公告)号: US20120305771A1
    公开(公告)日: 2012-12-06
  • 发明人: Lu-Ming Lai
  • 申请人: Lu-Ming Lai
  • 申请人地址: TW New Taipei City
  • 专利权人: EVERLIGHT ELECTRONICS CO., LTD.
  • 当前专利权人: EVERLIGHT ELECTRONICS CO., LTD.
  • 当前专利权人地址: TW New Taipei City
  • 优先权: CN201010128176.7 20100212
  • 国际申请: PCT/CN2011/070904 WO 20110210
  • 主分类号: H01L31/16
  • IPC分类号: H01L31/16 H01L31/18
Proximity Sensor Packaging Structure And Manufacturing Method Thereof
摘要:
The present invention pertains to a proximity sensor packaging structure, which comprises a substrate, two first electrically conductive layers and a plurality of second electrically conductive layers that are disposed on the substrate. The substrate has first and second grooves that are respectively defined by a bottom surface and an interior sidewall. Each electrically conductive layer extends from a bottom surface of the first groove, along the interior sidewall of the first groove and in an opposite direction relative to the other first electrically conductive layer, to an exterior sidewall of the substrate. The second electrically conductive layers include first and second electrically conductive portions. The first electrically conductive portion is disposed on a central region of the bottom surface of the second groove. The second electrically conductive portion extends from the bottom surface of the second groove, along the interior sidewall thereof, to the exterior sidewall of the substrate.
信息查询
IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件;其他类目中不包括的电固体器件(使用半导体器件的测量入G01;一般电阻器入H01C;磁体、电感器、变压器入H01F;一般电容器入H01G;电解型器件入H01G9/00;电池组、蓄电池入H01M;波导管、谐振器或波导型线路入H01P;线路连接器、汇流器入H01R;受激发射器件入H01S;机电谐振器入H03H;扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R;一般电光源入H05B;印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K;在具有特殊应用的电路中使用的半导体器件见应用相关的小类)
H01L31/00 对红外辐射、光、较短波长的电磁辐射,或微粒辐射敏感的,并且专门适用于把这样的辐射能转换为电能的,或者专门适用于通过这样的辐射进行电能控制的半导体器件;专门适用于制造或处理这些半导体器件或其部件的方法或设备;其零部件(H01L51/42优先;由形成在一共用衬底内或其上的多个固态组件,而不是辐射敏感元件与一个或多个电光源的结合所组成的器件入H01L27/00)
H01L31/12 .与如在一个共用衬底内或其上形成的,一个或多个电光源,如场致发光光源在结构上相连的,并与其电光源在电气上或光学上相耦合的(场致发光光源本身入H05B33/00)
H01L31/16 ..由单光源或多光源控制的对辐射敏感的半导体器件
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