发明申请
- 专利标题： METHOD FOR PROVIDING HIGH ETCH RATE
- 专利标题（中）： 提供高刻蚀速率的方法
-
申请号： US13188174申请日： 2011-07-21
-
公开(公告)号： US20120309194A1公开(公告)日： 2012-12-06
- 发明人: Qing Xu , Camelia Rusu , Jaroslaw W. Winniczek , Frank Y. Lin , Alan J. Miller
- 申请人： Qing Xu , Camelia Rusu , Jaroslaw W. Winniczek , Frank Y. Lin , Alan J. Miller
- 申请人地址： US CA Fremont
- 专利权人： LAM RESEARCH CORPORATION
- 当前专利权人： LAM RESEARCH CORPORATION
- 当前专利权人地址： US CA Fremont
- 主分类号： H01L21/3065
- IPC分类号： H01L21/3065
摘要：
A method for etching features into an etch layer in a plasma processing chamber, comprising a plurality of cycles is provided. Each cycle comprises a deposition phase and an etching phase. The deposition phase comprises providing a flow of deposition gas, forming a plasma from the deposition gas in the plasma processing chamber, providing a first bias during the deposition phase to provide an anisotropic deposition, and stopping the flow of the deposition gas into the plasma processing chamber. The etching phase, comprises providing a flow of an etch gas, forming a plasma from the etch gas in the plasma processing chamber, providing a second bias during the etch phase, wherein the first bias is greater than the second bias, and stopping the flow of the etch gas into the plasma processing chamber.
公开/授权文献
- US08609548B2 Method for providing high etch rate 公开/授权日：2013-12-17
信息查询
IPC分类:
