Invention Application
- Patent Title: GRAPHENE ELECTRONIC DEVICES HAVING MULTI-LAYERED GATE INSULATING LAYER
- Patent Title (中): 具有多层门绝缘层的石墨电子器件
-
Application No.: US13491999Application Date: 2012-06-08
-
Publication No.: US20120313079A1Publication Date: 2012-12-13
- Inventor: Hyun-jae Song , Byung-jin Cho , Sun-ae Seo , Woo-cheol Shin
- Applicant: Hyun-jae Song , Byung-jin Cho , Sun-ae Seo , Woo-cheol Shin
- Applicant Address: KR Daejeon KR Suwon-si
- Assignee: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY,SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY,SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Daejeon KR Suwon-si
- Priority: KR10-2011-0056341 20110610
- Main IPC: H01L29/775
- IPC: H01L29/775
Abstract:
A graphene electronic device includes a multi-layered gate insulating layer between a graphene channel layer and a gate electrode. The multi-layered gate insulating layer includes an organic insulating layer and an inorganic insulating layer on the organic insulating layer.
Public/Granted literature
- US08994079B2 Graphene electronic devices having multi-layered gate insulating layer Public/Granted day:2015-03-31
Information query
IPC分类:
