Invention Application
- Patent Title: SEMICONDUCTOR DEVICE HAVING METAL GATE AND MANUFACTURING METHOD THEREOF
- Patent Title (中): 具有金属门的半导体器件及其制造方法
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Application No.: US13158479Application Date: 2011-06-13
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Publication No.: US20120313178A1Publication Date: 2012-12-13
- Inventor: Po-Jui Liao , Tsung-Lung Tsai , Chien-Ting Lin , Shao-Hua Hsu , Yeng-Peng Wang , Chun-Hsien Lin , Chan-Lon Yang , Guang-Yaw Hwang , Shin-Chi Chen , Hung-Ling Shih , Jiunn-Hsiung Liao , Chia-Wen Liang
- Applicant: Po-Jui Liao , Tsung-Lung Tsai , Chien-Ting Lin , Shao-Hua Hsu , Yeng-Peng Wang , Chun-Hsien Lin , Chan-Lon Yang , Guang-Yaw Hwang , Shin-Chi Chen , Hung-Ling Shih , Jiunn-Hsiung Liao , Chia-Wen Liang
- Main IPC: H01L21/3205
- IPC: H01L21/3205 ; H01L29/78
Abstract:
A method of manufacturing a semiconductor device having metal gate includes providing a substrate having a first transistor and a second transistor formed thereon, the first transistor having a first gate trench formed therein, forming a first work function metal layer in the first gate trench, forming a sacrificial masking layer in the first gate trench, removing a portion of the sacrificial masking layer to expose a portion of the first work function metal layer, removing the exposed first function metal layer to form a U-shaped work function metal layer in the first gate trench, and removing the sacrificial masking layer. The first transistor includes a first conductivity type and the second transistor includes a second conductivity type. The first conductivity type and the second conductivity type are complementary.
Public/Granted literature
- US08704294B2 Semiconductor device having metal gate and manufacturing method thereof Public/Granted day:2014-04-22
Information query
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