Invention Application
- Patent Title: LOW-STRESS TSV DESIGN USING CONDUCTIVE PARTICLES
- Patent Title (中): 使用导电颗粒的低应力TSV设计
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Application No.: US13156609Application Date: 2011-06-09
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Publication No.: US20120314384A1Publication Date: 2012-12-13
- Inventor: Charles G. Woychik , Kishor Desai , Ilyas Mohammed , Terrence Caskey
- Applicant: Charles G. Woychik , Kishor Desai , Ilyas Mohammed , Terrence Caskey
- Applicant Address: US CA San Jose
- Assignee: Tessera, Inc.
- Current Assignee: Tessera, Inc.
- Current Assignee Address: US CA San Jose
- Main IPC: H05K5/00
- IPC: H05K5/00 ; H01L21/768 ; H05K7/00 ; H05K1/09 ; H05K1/11 ; H05K1/00

Abstract:
A component can include a substrate having a first surface and a second surface remote therefrom, an opening extending in a direction between the first and second surfaces, and a conductive via extending within the opening. The substrate can have a CTE less than 10 ppm/° C. The conductive via can include a plurality of base particles each including a first region of a first metal substantially covered by a layer of a second metal different from the first metal. The base particles can be metallurgically joined together and the second metal layers of the particles can be at least partially diffused into the first regions. The conductive via can include voids interspersed between the joined base particles. The voids can occupy 10% or more of a volume of the conductive via.
Public/Granted literature
- US08723049B2 Low-stress TSV design using conductive particles Public/Granted day:2014-05-13
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