发明申请
- 专利标题: METHOD FOR FORMATION OF ANODE OXIDE FILM
- 专利标题(中): 形成阳极氧化膜的方法
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申请号: US13581086申请日: 2011-02-23
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公开(公告)号: US20120318674A1公开(公告)日: 2012-12-20
- 发明人: Koji Wada , Mamoru Hosokawa , Takayuki Tsubota , Jun Hisamoto
- 申请人: Koji Wada , Mamoru Hosokawa , Takayuki Tsubota , Jun Hisamoto
- 申请人地址: JP Kobe-shi
- 专利权人: Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd)
- 当前专利权人: Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd)
- 当前专利权人地址: JP Kobe-shi
- 优先权: JP2010-039126 20100224; JP2011-001323 20110106
- 国际申请: PCT/JP2011/054036 WO 20110223
- 主分类号: C25D5/18
- IPC分类号: C25D5/18 ; C25D11/16 ; C25D11/18 ; C25D11/04
摘要:
The present invention provides a method for forming an anode oxide film, in which on the assumption that a direct-current power source is used, a thick anode oxide film can be formed with good productivity within a short time without using special equipment. The method includes allowing a current A0 to pass through an aluminum base material, and includes a step of repeating a first electricity cut-off treatment multiple times, in which when a voltage reaches a voltage V1 during the formation of the film, the passage of electricity is once cut off, this electricity cut-off is continued for a period equal to or longer than an electricity cut-off time T1, and the passage of electricity is then resumed, wherein the voltage V1 and electricity cut-off time T1 satisfy the prescribed expressions.
公开/授权文献
- US09187840B2 Method for formation of anode oxide film 公开/授权日:2015-11-17
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