发明申请
- 专利标题： CHARGE-TRAP BASED MEMORY
- 专利标题（中）： 基于充电轨迹的记忆
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申请号： US13598258申请日： 2012-08-29
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公开(公告)号： US20120319172A1公开(公告)日： 2012-12-20
- 发明人: Nirmal Ramaswamy , Gurtej S. Sandhu
- 申请人： Nirmal Ramaswamy , Gurtej S. Sandhu
- 主分类号： H01L29/788
- IPC分类号： H01L29/788 ; H01L27/088 ; H01L21/28
摘要：
Methods of fabricating 3D charge-trap memory cells are described, along with apparatus and systems that include them. In a planar stack formed by alternate layers of electrically conductive and insulating material, a substantially vertical opening may be formed. Inside the vertical opening a substantially vertical structure may be formed that comprises a first layer, a charge-trap layer, a tunneling oxide layer, and an epitaxial silicon portion. Additional embodiments are also described.
公开/授权文献
- US09029256B2 Charge-trap based memory 公开/授权日：2015-05-12
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