发明申请
- 专利标题： Semiconductor Diode and Method for Producing a Semiconductor Diode
- 专利标题（中）： 半导体二极管及其制造方法
-
申请号： US13580646申请日： 2011-02-10
-
公开(公告)号： US20120319299A1公开(公告)日： 2012-12-20
- 发明人: Tony Albrecht , Markus Maute , Martin Reufer , Heribert Zull
- 申请人： Tony Albrecht , Markus Maute , Martin Reufer , Heribert Zull
- 优先权： DE102010002204.7 20100222
- 国际申请： PCT/EP2011/051925 WO 20110210
- 主分类号： H01L29/861
- IPC分类号： H01L29/861 ; H01L21/329
摘要：
A semiconductor diode has a first semiconductor layer (102) of a first conductivity type and a second semiconductor layer of a second conductivity type having a doping. The second semiconductor layer has a vertical electrical via region (106) which is connected to the first semiconductor layer and in which the doping is modified in such a way that the electrical via region (106) has the first conductivity type. A method for producing such a semiconductor diode is described.
公开/授权文献
信息查询
IPC分类:
