Invention Application
- Patent Title: Direct Coupled Biasing Circuit for High Frequency Applications
- Patent Title (中): 直接耦合偏置电路用于高频应用
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Application No.: US13163562Application Date: 2011-06-17
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Publication No.: US20120319673A1Publication Date: 2012-12-20
- Inventor: KhongMeng Tham , Zaw Soe
- Applicant: KhongMeng Tham , Zaw Soe
- Applicant Address: US CA Carlsbad
- Assignee: Tensorcom, Inc.
- Current Assignee: Tensorcom, Inc.
- Current Assignee Address: US CA Carlsbad
- Main IPC: G05F3/02
- IPC: G05F3/02

Abstract:
This invention eliminates the need for “capacitor coupling” or “transformer coupling,” and the associated undesirable parasitic capacitance and inductance associated with these coupling techniques when designing high frequency (˜60 GHz) circuits. At this frequency, the distance between two adjacent stages needs to be minimized. A resonant circuit in series with the power or ground leads is used to isolate a biasing signal from a high frequency signal. The introduction of this resonant circuit allows a first stage to be “directly coupled” to a next stage using a metallic trace. The “direct coupling” technique passes both the high frequency signal and the biasing voltage to the next stage. The “direct coupling” approach overcomes the large die area usage when compared to either the “AC coupling” or “transformer coupling” approach since neither capacitors nor transformers are required to transfer the high frequency signals between stages.
Public/Granted literature
- US09143204B2 Direct coupled biasing circuit for high frequency applications Public/Granted day:2015-09-22
Information query
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