Invention Application
US20120322011A1 METHODS AND APPARATUS FOR PERFORMING MULTIPLE PHOTORESIST LAYER DEVELOPMENT AND ETCHING PROCESSES 有权
用于执行多个光电层发展和蚀刻过程的方法和装置

METHODS AND APPARATUS FOR PERFORMING MULTIPLE PHOTORESIST LAYER DEVELOPMENT AND ETCHING PROCESSES
Abstract:
The present invention provides methods and an apparatus controlling and minimizing process defects in a development process, and modifying line width roughness (LWR) of a photoresist layer after the development process, and maintaining good profile control during subsequent etching processes. In one embodiment, a method for forming features on a substrate includes developing and removing exposed areas in the photosensitive layer disposed on the substrate in the electron processing chamber by predominantly using electrons, removing contaminants from the substrate by predominantly using electrons, and etching the non-photosensitive polymer layer exposed by the developed photosensitive layer in the electron processing chamber by predominantly using electrons.
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