发明申请
- 专利标题： METHOD FOR FORMING TWO DEVICE WAFERS FROM A SINGLE BASE SUBSTRATE UTILIZING A CONTROLLED SPALLING PROCESS
- 专利标题（中）： 使用控制粉碎工艺从单个基板形成两个器件波形的方法
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申请号： US13159877申请日： 2011-06-14
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公开(公告)号： US20120322230A1公开(公告)日： 2012-12-20
- 发明人: Stephen W. Bedell , Keith E. Fogel , Paul A. Lauro , Devendra K. Sadana , Davood Shahrjerdi
- 申请人： Stephen W. Bedell , Keith E. Fogel , Paul A. Lauro , Devendra K. Sadana , Davood Shahrjerdi
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L21/78
- IPC分类号： H01L21/78
摘要：
The present disclosure provides a method for forming two device wafers starting from a single base substrate. The method includes first providing a structure which includes a base substrate with device layers located on, or within, a topmost surface and a bottommost surface of the base substrate. The base substrate may have double side polished surfaces. The structure including the device layers is spalled in a region within the base substrate that is between the device layers. The spalling provides a first device wafer including a portion of the base substrate and one of the device layers, and a second device wafer including another portion of the base substrate and the other of the device layer.