Invention Application
- Patent Title: ION IMPLANTATION APPARATUS AND ION IMPLANTATION METHOD
- Patent Title (中): 离子植入装置和离子植入方法
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Application No.: US13495888Application Date: 2012-06-13
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Publication No.: US20120322248A1Publication Date: 2012-12-20
- Inventor: Shiro NINOMIYA , Tetsuya KUDO
- Applicant: Shiro NINOMIYA , Tetsuya KUDO
- Applicant Address: JP Tokyo
- Assignee: SEN CORPORATION
- Current Assignee: SEN CORPORATION
- Current Assignee Address: JP Tokyo
- Priority: JP2011-132216 20110614
- Main IPC: H01L21/265
- IPC: H01L21/265

Abstract:
An ion implantation method in which an ion beam is scanned in a beam scanning direction and a wafer is mechanically scanned in a direction perpendicular to the beam scanning direction, includes setting a wafer rotation angle with respect to the ion beam so as to be varied, wherein a set angle of the wafer rotation angle is changed in a stepwise manner so as to implant ions into the wafer at each set angle, and wherein a wafer scanning region length is set to be varied, and, at the same time, a beam scanning speed of the ion beam is changed, in ion implantation at each set angle in a plurality of ion implantation operations during one rotation of the wafer, such that the ions are implanted into the wafer and dose amount non-uniformity in a wafer surface in other semiconductor manufacturing processes is corrected.
Public/Granted literature
- US09601314B2 Ion implantation apparatus and ion implantation method Public/Granted day:2017-03-21
Information query
IPC分类: