-
公开(公告)号：US20110297842A1
公开(公告)日：2011-12-08
申请号：US13154913
申请日：2011-06-07
Applicant: Shiro NINOMIYA , Toshio Yumiyama , Yasuhiko Kimura , Tetsuya Kudo , Akihiro Ochi
Inventor： Shiro NINOMIYA , Toshio Yumiyama , Yasuhiko Kimura , Tetsuya Kudo , Akihiro Ochi
IPC: H01J3/26
CPC classification number: H01J37/3171 , H01J37/304 , H01J2237/24405 , H01J2237/30483 , H01J2237/31703
Abstract: An ion beam irradiation method comprises calculating a scan voltage correction function with the maximum beam scan width depending on the measurement result of a beam current measurement device, calculating each of more than one scan voltage correction functions corresponding to each of scheduled beam scan widths depending on the calculated scan voltage correction functions while satisfying dose uniformity in the horizontal direction, measuring a mechanical Y-scan position during the ion implantation, changing the scan voltage correction function as a function of the measured mechanical Y-scan position so that the beam scan area becomes a D-shaped multistage beam scan area corresponding to an outer periphery of a half of the wafer to thereby reduce the beam scan width, and changing a mechanical Y-scan speed depending on the change of the measurement result of a side cup current measurement device to thereby keep the dose uniformity in the vertical direction.
Abstract translation: 离子束照射方法包括根据束电流测量装置的测量结果计算具有最大光束扫描宽度的扫描电压校正函数，计算与根据预定的束扫描宽度相对应的每个扫描电压校正函数 计算出的扫描电压校正功能，同时满足水平方向上的剂量均匀性，测量离子注入期间的机械Y扫描位置，根据测量的机械Y扫描位置改变扫描电压校正功能，使得束扫描区域 成为与晶片的一半的外周对应的D字状的多级光束扫描区域，从而减小光束扫描宽度，并且根据侧杯电流测量的测量结果的变化来改变机械Y扫描速度 从而保持在垂直方向上的剂量均匀性。
-
公开(公告)号：US08772142B2
公开(公告)日：2014-07-08
申请号：US13426423
申请日：2012-03-21
Applicant: Shiro Ninomiya , Tetsuya Kudo , Akihiro Ochi
Inventor： Shiro Ninomiya , Tetsuya Kudo , Akihiro Ochi
IPC: H01L21/425
CPC classification number: H01L21/265 , C23C14/48 , C23C14/542 , H01J37/3007 , H01J37/3023 , H01J37/3171 , H01J37/3172 , H01J2237/30483
Abstract: An ion implantation method includes reciprocally scanning an ion beam, mechanically scanning a wafer in a direction perpendicular to the ion beam scanning direction, implanting ions into the wafer, and generating an ion implantation amount distribution in a wafer surface of an isotropic concentric circle shape for correcting non-uniformity in the wafer surface in other semiconductor manufacturing processes, by controlling a beam scanning speed in the ion beam scanning direction and a wafer scanning speed in the mechanical scanning direction at the same time and independently using the respective control functions defining speed correction amounts.
Abstract translation: 离子注入方法包括：对离子束进行往复扫描，在与离子束扫描方向垂直的方向上机械地扫描晶片，将离子注入到晶片中，以及在各向同性圆形圆片的晶片表面产生离子注入量分布， 通过控制离子束扫描方向上的光束扫描速度和机械扫描方向上的晶片扫描速度，同时独立地使用限定速度校正的各个控制功能来校正其他半导体制造工艺中的晶片表面的不均匀性 金额
-
公开(公告)号：US07434166B2
公开(公告)日：2008-10-07
申请号：US10859653
申请日：2004-06-02
Applicant: Shrikant Acharya , Shrinath Acharya , John E. Crosbie , Shiro Ninomiya
Inventor： Shrikant Acharya , Shrinath Acharya , John E. Crosbie , Shiro Ninomiya
CPC classification number: H04L63/0428 , G03B21/10 , G03B2206/00 , H04N21/4122 , H04N21/43615 , H04N21/43637 , H04N21/441 , H04N21/4753 , H04W12/06
Abstract: A system and method for interactive management of multiple wireless devices (such as PDA's or desktop or laptop computers) making graphical or video presentations while connected wirelessly to a display device whose wireless module converts the transmitted data from the wireless devices to the required format for display.
Abstract translation: 一种用于交互式管理多个无线设备（例如PDA或台式或膝上型计算机）的系统和方法，其进行图形或视频呈现，同时无线地连接到其无线模块将所传送的数据从无线设备转换为所需的格式以用于显示的显示设备 。
-
公开(公告)号：US20050036509A1
公开(公告)日：2005-02-17
申请号：US10859653
申请日：2004-06-02
Applicant: Shrikant Acharya , Shrinath Acharya , John Crosbie , Shiro Ninomiya
Inventor： Shrikant Acharya , Shrinath Acharya , John Crosbie , Shiro Ninomiya
IPC: H04B7/14 , H04J3/22 , H04L5/22 , H04L12/28 , H04L12/56 , H04Q11/00 , H04W12/02 , H04W12/06 , H04Q7/20
CPC classification number: H04L63/0428 , G03B21/10 , G03B2206/00 , H04N21/4122 , H04N21/43615 , H04N21/43637 , H04N21/441 , H04N21/4753 , H04W12/06
Abstract: A system and method for interactive management of multiple wireless devices (such as PDA's or desktop or laptop computers) making graphical or video presentations while connected wirelessly to a display device whose wireless module converts the transmitted data from the wireless devices to the required format for display.
Abstract translation: 一种用于交互式管理多个无线设备（例如PDA或台式或膝上型计算机）的系统和方法，其进行图形或视频呈现，同时无线地连接到其无线模块将所传送的数据从无线设备转换为所需的格式以用于显示的显示设备 。
-
公开(公告)号：US09601314B2
公开(公告)日：2017-03-21
申请号：US13495888
申请日：2012-06-13
Applicant: Shiro Ninomiya , Tetsuya Kudo
Inventor： Shiro Ninomiya , Tetsuya Kudo
IPC: H01J37/317
CPC classification number: H01L21/26586 , C23C14/48 , C23C14/54 , H01J37/3171 , H01J2237/20214 , H01J2237/20228 , H01J2237/30483 , H01J2237/3171
Abstract: An ion implantation method in which an ion beam is scanned in a beam scanning direction and a wafer is mechanically scanned in a direction perpendicular to the beam scanning direction, includes setting a wafer rotation angle with respect to the ion beam so as to be varied, wherein a set angle of the wafer rotation angle is changed in a stepwise manner so as to implant ions into the wafer at each set angle, and wherein a wafer scanning region length is set to be varied, and, at the same time, a beam scanning speed of the ion beam is changed, in ion implantation at each set angle in a plurality of ion implantation operations during one rotation of the wafer, such that the ions are implanted into the wafer and dose amount non-uniformity in a wafer surface in other semiconductor manufacturing processes is corrected.
-
Patent Agency Ranking
公开(公告)号：US08772741B2
公开(公告)日：2014-07-08
申请号：US13432936
申请日：2012-03-28
Applicant: Shiro Ninomiya , Akihiro Ochi , Yasuhiko Kimura , Yasuharu Okamoto , Toshio Yumiyama
Inventor： Shiro Ninomiya , Akihiro Ochi , Yasuhiko Kimura , Yasuharu Okamoto , Toshio Yumiyama
IPC: H01J37/317
CPC classification number: H01J37/3171 , H01J37/3023 , H01J37/3172 , H01J2237/30483 , H01J2237/31701 , H01J2237/31706
Abstract: An ion implantation method includes reciprocally scanning an ion beam, mechanically scanning a wafer in a direction perpendicular to a beam scanning direction, and implanting ions into the wafer. The wafer is divided into a plurality of implantation regions, a beam scanning speed in the beam scanning direction is set to be varied for each of the implantation regions, an ion implantation amount distribution for each of the implantation regions is controlled by changing and controlling the beam scanning speed, and the ion implantation amount for each of the implantation regions is controlled and a beam scanning frequency and a beam scanning amplitude in the control of the beam scanning speed for each of the implantation regions is made to be constant by setting a wafer mechanical scanning speed and controlling the wafer mechanical scanning speed for each of the implantation regions.
Abstract translation: 离子注入方法包括：对离子束进行往复扫描，在垂直于光束扫描方向的方向上机械地扫描晶片，以及将离子注入晶片。 将晶片分割为多个注入区域，对于每个注入区域，将波束扫描方向的波束扫描速度设定为变化，通过改变和控制每个注入区域的离子注入量分布来控制 光束扫描速度，并且对每个注入区域的离子注入量进行控制，并且通过设置晶片来使每个注入区域的光束扫描速度控制中的光束扫描频率和光束扫描幅度保持恒定 机械扫描速度并控制每个注入区域的晶片机械扫描速度。
-
公开(公告)号：US06853120B2
公开(公告)日：2005-02-08
申请号：US10283428
申请日：2002-10-29
Applicant: Shiro Ninomiya
Inventor： Shiro Ninomiya
CPC classification number: H01J29/07 , H01J2229/0744
Abstract: Positions of paired perforations that are provided in a shadow mask and through which a vibration suppressor is to be inserted with play are deviated from each other in a horizontal direction and in a vertical direction. Since the positions of the paired perforations are deviated from each other not only in the vertical direction but also in the horizontal direction, upon vibrations of the shadow mask, the vibration suppressor surely comes into contact with, rubs against, and separates from the periphery of both of the paired perforations. Consequently, a vibration attenuating effect by the vibration suppressor is exhibited stably, and a vibration decay time can be reduced.
Abstract translation: 设置在荫罩中的配对穿孔的位置和通过其进行插入的振动抑制器的位置在水平方向和垂直方向上彼此偏离。 由于成对的穿孔的位置不仅在垂直方向上而且在水平方向上彼此偏离，所以在荫罩的振动时，振动抑制器肯定地接触，摩擦和从周边分离 两个成对的穿孔。 因此，能够稳定地发挥振动抑制器的振动衰减效果，能够降低振动衰减时间。
-
公开(公告)号：US20120244691A1
公开(公告)日：2012-09-27
申请号：US13426423
申请日：2012-03-21
Applicant: Shiro NINOMIYA , Tetsuya KUDO , Akihiro OCHI
Inventor： Shiro NINOMIYA , Tetsuya KUDO , Akihiro OCHI
IPC: H01L21/265
CPC classification number: H01L21/265 , C23C14/48 , C23C14/542 , H01J37/3007 , H01J37/3023 , H01J37/3171 , H01J37/3172 , H01J2237/30483
Abstract: An ion implantation method includes reciprocally scanning an ion beam, mechanically scanning a wafer in a direction perpendicular to the ion beam scanning direction, implanting ions into the wafer, and generating an ion implantation amount distribution in a wafer surface of an isotropic concentric circle shape for correcting non-uniformity in the wafer surface in other semiconductor manufacturing processes, by controlling a beam scanning speed in the ion beam scanning direction and a wafer scanning speed in the mechanical scanning direction at the same time and independently using the respective control functions defining speed correction amounts.
Abstract translation: 离子注入方法包括：对离子束进行往复扫描，在与离子束扫描方向垂直的方向上机械地扫描晶片，将离子注入到晶片中，以及在各向同性圆形圆片的晶片表面产生离子注入量分布， 通过控制离子束扫描方向上的光束扫描速度和机械扫描方向上的晶片扫描速度，同时独立地使用限定速度校正的各个控制功能来校正其他半导体制造工艺中的晶片表面的不均匀性 金额
-
公开(公告)号：US08735855B2
公开(公告)日：2014-05-27
申请号：US13154913
申请日：2011-06-07
Applicant: Shiro Ninomiya , Toshio Yumiyama , Yasuhiko Kimura , Tetsuya Kudo , Akihiro Ochi
Inventor： Shiro Ninomiya , Toshio Yumiyama , Yasuhiko Kimura , Tetsuya Kudo , Akihiro Ochi
IPC: H01J3/26
CPC classification number: H01J37/3171 , H01J37/304 , H01J2237/24405 , H01J2237/30483 , H01J2237/31703
Abstract: An ion beam irradiation method comprises calculating a scan voltage correction function with the maximum beam scan width depending on the measurement result of a beam current measurement device, calculating each of more than one scan voltage correction functions corresponding to each of scheduled beam scan widths depending on the calculated scan voltage correction functions while satisfying dose uniformity in the horizontal direction, measuring a mechanical Y-scan position during the ion implantation, changing the scan voltage correction function as a function of the measured mechanical Y-scan position so that the beam scan area becomes a D-shaped multistage beam scan area corresponding to an outer periphery of a half of the wafer to thereby reduce the beam scan width, and changing a mechanical Y-scan speed depending on the change of the measurement result of a side cup current measurement device to thereby keep the dose uniformity in the vertical direction.
Abstract translation: 离子束照射方法包括根据束电流测量装置的测量结果计算具有最大光束扫描宽度的扫描电压校正函数，计算与根据预定的束扫描宽度相对应的每个扫描电压校正函数 计算出的扫描电压校正功能，同时满足水平方向上的剂量均匀性，测量离子注入期间的机械Y扫描位置，根据测量的机械Y扫描位置改变扫描电压校正功能，使得束扫描区域 成为与晶片的一半的外周对应的D字状的多级光束扫描区域，从而减小光束扫描宽度，并且根据侧杯电流测量的测量结果的变化来改变机械Y扫描速度 从而保持在垂直方向上的剂量均匀性。
-
公开(公告)号：US20120322248A1
公开(公告)日：2012-12-20
申请号：US13495888
申请日：2012-06-13
Applicant: Shiro NINOMIYA , Tetsuya KUDO
Inventor： Shiro NINOMIYA , Tetsuya KUDO
IPC: H01L21/265
CPC classification number: H01L21/26586 , C23C14/48 , C23C14/54 , H01J37/3171 , H01J2237/20214 , H01J2237/20228 , H01J2237/30483 , H01J2237/3171
Abstract: An ion implantation method in which an ion beam is scanned in a beam scanning direction and a wafer is mechanically scanned in a direction perpendicular to the beam scanning direction, includes setting a wafer rotation angle with respect to the ion beam so as to be varied, wherein a set angle of the wafer rotation angle is changed in a stepwise manner so as to implant ions into the wafer at each set angle, and wherein a wafer scanning region length is set to be varied, and, at the same time, a beam scanning speed of the ion beam is changed, in ion implantation at each set angle in a plurality of ion implantation operations during one rotation of the wafer, such that the ions are implanted into the wafer and dose amount non-uniformity in a wafer surface in other semiconductor manufacturing processes is corrected.
Abstract translation: 一种离子注入方法，其中离子束沿光束扫描方向扫描并且晶片在垂直于光束扫描方向的机械扫描中包括设置相对于离子束的晶片旋转角度以便改变， 其中晶片旋转角度的设定角度以逐步的方式改变，以便以每个设定的角度将离子注入到晶片中，并且其中晶片扫描区域长度被设定为变化，并且同时， 在晶片的一次旋转期间，在多个离子注入操作中，在每个设定角度的离子注入中改变离子束的扫描速度，使得离子注入到晶片中并且在晶片表面中的剂量不均匀 其他半导体制造工艺得到纠正。
-
-
-
-
-
-
-
-
-
Search Results
11
records
(took 0.024 seconds)
