Invention Application
- Patent Title: Formation of A Zinc Passivation Layer on Titanium or Titanium Alloys Used in
- Patent Title (中): 在钛或钛合金上形成锌钝化层
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Application No.: US13335011Application Date: 2011-12-22
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Publication No.: US20120325109A1Publication Date: 2012-12-27
- Inventor: Bob Kong , Zhi-Wen Sun , Chi-I Lang , Jinhong Tong , Tony Chiang
- Applicant: Bob Kong , Zhi-Wen Sun , Chi-I Lang , Jinhong Tong , Tony Chiang
- Applicant Address: US CA San Jose
- Assignee: Intermolecular, Inc.
- Current Assignee: Intermolecular, Inc.
- Current Assignee Address: US CA San Jose
- Main IPC: C09D1/00
- IPC: C09D1/00
Abstract:
Embodiments of the current invention describe methods of processing a semiconductor substrate that include applying a zincating solution to the semiconductor substrate to form a zinc passivation layer on the titanium-containing layer, the zincating solution comprising a zinc salt, FeCl3, and a pH adjuster.
Public/Granted literature
- US08859427B2 Formation of a zinc passivation layer on titanium or titanium alloys used in semiconductor processing Public/Granted day:2014-10-14
Information query
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