Invention Application
US20120325291A1 METHOD FOR PRODUCING BACK ELECTRODE TYPE, SOLAR CELL, BACK ELECTRODE TYPE SOLAR CELL AND BACK ELECTRODE TYPE SOLAR CELL MODULE
审中-公开
背电极型，太阳能电池，背电极型太阳能电池和背电极型太阳能电池模块的制造方法
- Patent Title: METHOD FOR PRODUCING BACK ELECTRODE TYPE, SOLAR CELL, BACK ELECTRODE TYPE SOLAR CELL AND BACK ELECTRODE TYPE SOLAR CELL MODULE
- Patent Title (中): 背电极型，太阳能电池，背电极型太阳能电池和背电极型太阳能电池模块的制造方法
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Application No.: US13576247Application Date: 2011-01-27
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Publication No.: US20120325291A1Publication Date: 2012-12-27
- Inventor: Yuji Yokosawa , Yasushi Funakoshi , Satoshi Okamoto , Takahisa Kurahashi
- Applicant: Yuji Yokosawa , Yasushi Funakoshi , Satoshi Okamoto , Takahisa Kurahashi
- Priority: JP2010020029 20100210
- International Application: PCT/JP2011/051555 WO 20110127
- Main IPC: H01L31/0224
- IPC: H01L31/0224 ; H01L31/18 ; H01L31/048
Abstract:
A method for producing a back electrode type solar cell including the steps of forming a light-receiving surface diffusion layer and an anti-reflection film by applying, to a light-receiving surface of a silicon substrate, a solution containing a compound containing an impurity identical in conductivity type to the silicon substrate, a titanium alkoxide, and an alcohol, followed by heat treatment, and forming a light-receiving surface passivation film on the light-receiving surface of the silicon substrate by heat treatment; a back electrode type solar cell including a light-receiving surface diffusion layer, and an anti-reflection film on the light-receiving surface diffusion layer, made of titanium oxide containing an impurity identical in conductivity type to a silicon substrate; and a back electrode type solar cell module including the back electrode type solar cells.
Information query
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