公开(公告)号：US20120325291A1

公开(公告)日：2012-12-27

申请号：US13576247

申请日：2011-01-27

申请人： Yuji Yokosawa ,  Yasushi Funakoshi ,  Satoshi Okamoto ,  Takahisa Kurahashi

发明人： Yuji Yokosawa ,  Yasushi Funakoshi ,  Satoshi Okamoto ,  Takahisa Kurahashi

IPC分类号： H01L31/0224 ,  H01L31/18 ,  H01L31/048

CPC分类号： H01L31/02168 ,  H01L31/0288 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： A method for producing a back electrode type solar cell including the steps of forming a light-receiving surface diffusion layer and an anti-reflection film by applying, to a light-receiving surface of a silicon substrate, a solution containing a compound containing an impurity identical in conductivity type to the silicon substrate, a titanium alkoxide, and an alcohol, followed by heat treatment, and forming a light-receiving surface passivation film on the light-receiving surface of the silicon substrate by heat treatment; a back electrode type solar cell including a light-receiving surface diffusion layer, and an anti-reflection film on the light-receiving surface diffusion layer, made of titanium oxide containing an impurity identical in conductivity type to a silicon substrate; and a back electrode type solar cell module including the back electrode type solar cells.

摘要翻译： 一种背电极型太阳能电池的制造方法，其特征在于，具有以下工序：在所述硅基板的受光面上涂布含有杂质的溶液的溶液，形成受光面扩散层和防反射膜 导电类型与硅衬底，钛醇盐和醇相同，随后热处理，并且通过热处理在硅衬底的光接收表面上形成光接收表面钝化膜; 背光电极型太阳能电池，其包含受光面扩散层和在受光面扩散层上的防反射膜，所述防反射膜由含有与硅衬底导电类型相同的杂质的钛氧化物构成; 以及包括背面电极型太阳能电池的背面电极型太阳能电池模块。

公开(公告)号：US09130101B2

公开(公告)日：2015-09-08

申请号：US13699397

申请日：2011-05-13

申请人： Kenji Fujita ,  Yasushi Funakoshi ,  Hiroyuki Oka ,  Satoshi Okamoto

发明人： Kenji Fujita ,  Yasushi Funakoshi ,  Hiroyuki Oka ,  Satoshi Okamoto

IPC分类号： H01L21/22 ,  H01L31/068 ,  B24B27/06 ,  H01L31/18 ,  H01L31/0224

CPC分类号： H01L31/0682 ,  B24B27/0633 ,  H01L31/022441 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： A semiconductor device and a method for manufacturing the semiconductor device are provided. A semiconductor substrate has a surface on which an abrasion trace is formed, and a dopant diffusion region includes a portion extending in the direction at an angle within the range of −5° to +5° with respect to the direction in which the abrasion trace extends.

摘要翻译： 提供半导体器件和制造半导体器件的方法。 半导体基板具有形成磨损痕迹的表面，掺杂剂扩散区域包括相对于磨损痕迹的方向在-5°至+ 5°的范围内沿该方向延伸的部分 延伸。

公开(公告)号：US20130069209A1

公开(公告)日：2013-03-21

申请号：US13699397

申请日：2011-05-13

申请人： Kenji Fujita ,  Yasushi Funakoshi ,  Hiroyuki Oka ,  Satoshi Okamoto

发明人： Kenji Fujita ,  Yasushi Funakoshi ,  Hiroyuki Oka ,  Satoshi Okamoto

IPC分类号： H01L29/06 ,  H01L21/22

CPC分类号： H01L31/0682 ,  B24B27/0633 ,  H01L31/022441 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： A semiconductor device and a method for manufacturing the semiconductor device are provided. A semiconductor substrate has a surface on which an abrasion trace is formed, and a dopant diffusion region includes a portion extending in the direction at an angle within the range of −5° to +5° with respect to the direction in which the abrasion trace extends

摘要翻译： 提供半导体器件和制造半导体器件的方法。 半导体基板具有形成磨损痕迹的表面，掺杂剂扩散区域包括相对于磨损痕迹的方向在-5°至+ 5°的范围内沿该方向延伸的部分 延伸

公开(公告)号：US08257994B2

公开(公告)日：2012-09-04

申请号：US12746811

申请日：2008-12-08

申请人： Yasushi Funakoshi

发明人： Yasushi Funakoshi

IPC分类号： H01L21/00 ,  H01L21/302

CPC分类号： H01L31/1804 ,  H01L31/02363 ,  H01L31/068 ,  Y02E10/547 ,  Y02P70/521

摘要： The present invention provides a method for manufacturing a solar cell, including: diffusing p type impurity into at least a portion of a first surface, which is one surface of a silicon substrate, to form a high concentration p type impurity diffusion layer; and etching one of the first surface of the silicon substrate and a second surface of the silicon substrate opposite to the first surface, using as a mask at least one of the high concentration p type impurity diffusion layer and a film formed on the high concentration p type impurity diffusion layer upon forming the high concentration p type impurity diffusion layer.

摘要翻译： 本发明提供一种太阳能电池的制造方法，包括：将p型杂质扩散到作为硅衬底的一个表面的第一表面的至少一部分中，形成高浓度p型杂质扩散层; 并且使用高浓度p型杂质扩散层和在高浓度p形成的膜中的至少一个作为掩模蚀刻硅衬底的第一表面之一和与第一表面相对的硅衬底的第二表面 在形成高浓度p型杂质扩散层时形成杂质扩散层。

公开(公告)号：US20110014725A1

公开(公告)日：2011-01-20

申请号：US12865207

申请日：2008-12-18

申请人： Yoshiya Abiko ,  Yasushi Funakoshi ,  Kyotaro Nakamura

发明人： Yoshiya Abiko ,  Yasushi Funakoshi ,  Kyotaro Nakamura

IPC分类号： H01L21/66

CPC分类号： H01L31/0516 ,  H01L31/048 ,  H01L31/18 ,  H01L31/188 ,  Y02E10/50

摘要： Disclosed is a method for manufacturing a solar cell module in which a wiring substrate having a base material and a wiring formed on the base material, and a plurality of solar cells electrically connected by being placed on the wiring of the wiring substrate are sealed with a sealant, including a first step of placing at least one of the solar cells on the wiring of the wiring substrate, and a second step of sealing the wiring substrate and the solar cells with the sealant, the method including the step of conducting an inspection of the solar cells after the first step and before the second step.

摘要翻译： 公开了一种太阳能电池模块的制造方法，其中具有基材的布线基板和形成在基材上的布线以及通过放置在布线基板的布线上电连接的多个太阳能电池被密封在一起 密封剂，包括将至少一个太阳能电池放置在布线基板的布线上的第一步骤以及用密封剂密封布线基板和太阳能电池的第二步骤，该方法包括以下步骤：对 太阳能电池第一步之后和第二步之前。

公开(公告)号：US20100200058A1

公开(公告)日：2010-08-12

申请号：US12679722

申请日：2008-08-29

申请人： Yasushi Funakoshi

发明人： Yasushi Funakoshi

IPC分类号： H01L31/00 ,  B32B38/10 ,  B29C65/48

CPC分类号： H01L31/0516 ,  H01L31/0201 ,  H01L31/048 ,  H01L31/049 ,  Y02E10/50 ,  Y10T156/10

摘要： The present invention provides a solar battery including a solar cell; a wiring substrate having a wire to be electrically connected to an electrode provided in the solar cell; and an adhesive agent for adhering the solar cell and the wiring substrate to each other. The present invention also provides a method for manufacturing the solar battery, a method for manufacturing a solar cell module using the solar battery, and the solar cell module.

摘要翻译： 本发明提供一种太阳能电池，其包括太阳能电池; 布线基板，具有与设置在太阳能电池中的电极电连接的导线; 以及用于将太阳能电池和布线基板彼此粘合的粘合剂。 本发明还提供一种太阳能电池的制造方法，使用太阳能电池的太阳能电池模块的制造方法以及太阳能电池模块。

公开(公告)号：US20100018565A1

公开(公告)日：2010-01-28

申请号：US12523106

申请日：2007-12-27

申请人： Yasushi Funakoshi

发明人： Yasushi Funakoshi

IPC分类号： H01L31/042 ,  H01L31/00

CPC分类号： B32B17/10018 ,  B32B17/10788 ,  H01L31/022433 ,  H01L31/0508 ,  H01L31/0516 ,  H01L31/0682 ,  Y02E10/547

摘要： There is provided a solar cell array and a solar cell module including the solar cell array, comprising: a solar cell wafer including a semiconductor substrate and a p electrode and an n electrode provided at a surface of the semiconductor substrate; an interconnection substrate including an insulating substrate having a light receiving surface and a p interconnection and an n interconnection provided at the light receiving surface and electrically insulated from each other, on the interconnection substrate, more than one solar cell wafer being disposed adjacently, the p electrode and the p interconnection being electrically connected, the n electrode and the n interconnection being electrically connected; and an interconnection formed such that the p interconnection electrically connected to one solar cell wafer and the n interconnection electrically connected to another solar cell wafer adjacent to one solar cell wafer are electrically connected at the light receiving surface and a surface opposite thereto.

摘要翻译： 提供一种太阳能电池阵列和包括太阳能电池阵列的太阳能电池模块，包括：太阳能电池晶片，包括半导体衬底和设置在半导体衬底的表面的p电极和n电极; 互连基板，具有在所述配线基板上具有光接收面和p型互连的绝缘基板和设置于所述受光面的n互连，并且彼此电绝缘的多个太阳能电池晶片相邻配置，所述p电极 并且所述p互连电连接，所述n电极和所述n互连电连接; 以及互连形成为使得与一个太阳能电池晶片电连接的p互连和与一个太阳能电池晶片相邻的另一太阳能电池晶片电连接的n互连电连接在光接收表面和与其相对的表面。

公开(公告)号：US5578200A

公开(公告)日：1996-11-26

申请号：US501661

申请日：1995-07-12

申请人： Yasushi Funakoshi ,  Khoji Ogata ,  Masayuki Kojima ,  Hitoshi Kawaziri ,  Hirofumi Yamamoto ,  Kazuhiko Noto ,  Naomichi Mori

发明人： Yasushi Funakoshi ,  Khoji Ogata ,  Masayuki Kojima ,  Hitoshi Kawaziri ,  Hirofumi Yamamoto ,  Kazuhiko Noto ,  Naomichi Mori

IPC分类号： B01D21/00 ,  B01D21/01 ,  B01D21/02 ,  B01D24/16 ,  C02F3/06 ,  C02F3/10 ,  C02F3/30 ,  C02F9/00 ,  B01D17/12 ,  B01D35/05

CPC分类号： C02F9/00 ,  B01D21/0003 ,  B01D21/0006 ,  B01D21/0012 ,  B01D21/003 ,  B01D21/0036 ,  B01D21/0042 ,  B01D21/02 ,  B01D21/04 ,  B01D21/183 ,  B01D21/2427 ,  B01D21/2472 ,  B01D21/26 ,  B01D24/165 ,  C02F3/06 ,  C02F3/10 ,  C02F3/308 ,  B01D21/01 ,  B01D2201/14 ,  Y02W10/15

摘要： A sewage treatment system is provided for cleaning sewage by filtering solid components in the sewage through use of a floating filter medium, wherein the filtration performance can be improved and the filtration cleaning can be performed efficiently. The sewage flows upwardly in the treatment tank and is filtered through the floating filter media layer made of cylindrical mesh floating filter media which have a smaller specific gravity than the sewage. To wash the floating filter medium, air is jetted from the air jetting pipes to generate a circular flow to scape off solid components adhering to the filter medium. Then the waste, which has washed the floating filter medium is discharged to the outside of the treatment tank while the air is jetted from the air jetting pipe for full jetting of the floating filter media layer unidirectionally.

摘要翻译： 提供污水处理系统，通过使用浮动过滤介质过滤污水中的固体成分来清洗污水，其中可以提高过滤性能，并且可以有效地进行过滤清洗。 污水在处理槽中向上流动，并通过由比污水小的圆柱形网状浮动过滤介质制成的浮动过滤介质层过滤。 为了洗涤浮动过滤介质，从空气喷射管喷射空气以产生圆形流动，以刮除附着在过滤介质上的固体成分。 然后将漂浮的过滤介质洗涤的废物排出到处理槽的外部，同时从空气喷射管喷射空气，以单向完全喷射浮动过滤介质层。

公开(公告)号：US20110300697A1

公开(公告)日：2011-12-08

申请号：US13202861

申请日：2010-02-24

申请人： Masatsugu Kohira ,  Yasushi Funakoshi

发明人： Masatsugu Kohira ,  Yasushi Funakoshi

IPC分类号： H01L21/22

CPC分类号： H01L31/1804 ,  H01L21/2254 ,  H01L31/061 ,  Y02E10/547 ,  Y02P70/521

摘要： Disclosed is a method of fabricating a semiconductor device, including the steps of forming a diffusion preventing mask on a surface of a semiconductor substrate, applying a dopant diffusing agent containing a dopant of a first conductivity type or a second conductivity type onto the surface of the semiconductor substrate at a spacing from the diffusion preventing mask, and forming a dopant diffusion layer by diffusing the dopant from the dopant diffusing agent into the semiconductor substrate.

摘要翻译： 本发明公开了一种制造半导体器件的方法，包括以下步骤：在半导体衬底的表面上形成防扩散掩模，将含有第一导电类型或第二导电类型的掺杂剂的掺杂剂扩散剂施加到半导体衬底的表面上 半导体衬底，与扩散防止掩模间隔开，并且通过将掺杂剂从掺杂剂扩散剂扩散到半导体衬底中而形成掺杂剂扩散层。

公开(公告)号：US20110114179A1

公开(公告)日：2011-05-19

申请号：US12995381

申请日：2009-03-23

申请人： Yasushi Funakoshi

发明人： Yasushi Funakoshi

IPC分类号： H01L31/02 ,  H01L31/0203 ,  H01L31/18

CPC分类号： H01L31/0682 ,  H01L31/022441 ,  H01L31/0516 ,  H01L31/068 ,  Y02E10/547

摘要： There is provided a solar battery, including: a solar cell including an electrode ving a contact resistance with a silicon substrate of 70 mΩ·cm2 or less; and a conductive member for electrically connecting to the electrode of the solar cell, the solar cell being arranged on the conductive member such that the electrode of the solar cell is electrically connected to the conductive member. There is also provided a method for manufacturing the solar battery and a solar cell module using the solar battery.

摘要翻译： 提供一种太阳能电池，包括：太阳能电池，其包括具有70mΩ·cm 2·cm 2以下的硅基板的接触电阻的电极; 以及用于电连接到太阳能电池的电极的导电构件，太阳能电池被布置在导电构件上，使得太阳能电池的电极电连接到导电构件。 还提供了一种用于制造太阳能电池的方法和使用太阳能电池的太阳能电池模块。