发明申请
US20120325291A1 METHOD FOR PRODUCING BACK ELECTRODE TYPE, SOLAR CELL, BACK ELECTRODE TYPE SOLAR CELL AND BACK ELECTRODE TYPE SOLAR CELL MODULE
审中-公开
背电极型，太阳能电池，背电极型太阳能电池和背电极型太阳能电池模块的制造方法
- 专利标题： METHOD FOR PRODUCING BACK ELECTRODE TYPE, SOLAR CELL, BACK ELECTRODE TYPE SOLAR CELL AND BACK ELECTRODE TYPE SOLAR CELL MODULE
- 专利标题（中）： 背电极型，太阳能电池，背电极型太阳能电池和背电极型太阳能电池模块的制造方法
-
申请号： US13576247申请日： 2011-01-27
-
公开(公告)号： US20120325291A1公开(公告)日： 2012-12-27
- 发明人: Yuji Yokosawa , Yasushi Funakoshi , Satoshi Okamoto , Takahisa Kurahashi
- 申请人： Yuji Yokosawa , Yasushi Funakoshi , Satoshi Okamoto , Takahisa Kurahashi
- 优先权： JP2010020029 20100210
- 国际申请： PCT/JP2011/051555 WO 20110127
- 主分类号： H01L31/0224
- IPC分类号： H01L31/0224 ; H01L31/18 ; H01L31/048
摘要：
A method for producing a back electrode type solar cell including the steps of forming a light-receiving surface diffusion layer and an anti-reflection film by applying, to a light-receiving surface of a silicon substrate, a solution containing a compound containing an impurity identical in conductivity type to the silicon substrate, a titanium alkoxide, and an alcohol, followed by heat treatment, and forming a light-receiving surface passivation film on the light-receiving surface of the silicon substrate by heat treatment; a back electrode type solar cell including a light-receiving surface diffusion layer, and an anti-reflection film on the light-receiving surface diffusion layer, made of titanium oxide containing an impurity identical in conductivity type to a silicon substrate; and a back electrode type solar cell module including the back electrode type solar cells.
信息查询
IPC分类:
