- 专利标题： AVALANCHE IMPACT IONIZATION AMPLIFICATION DEVICES
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申请号： US13603567申请日： 2012-09-05
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公开(公告)号： US20120326012A1公开(公告)日： 2012-12-27
- 发明人: Solomon Assefa , Yurii A. Vlasov , Fengnian Xia
- 申请人： Solomon Assefa , Yurii A. Vlasov , Fengnian Xia
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L31/107
- IPC分类号： H01L31/107 ; H03K17/06
摘要：
A semiconductor photodetector may provide charge carrier avalanche multiplication at high field regions of a semiconductor material layer. A semiconductor current amplifier may provide current amplification by impact ionization near a high field region. A plurality of metal electrodes are formed on a surface of a semiconductor material layer and electrically biased to produce a non-uniform high electric field in which the high electric field strength accelerates avalanche electron-hole pair generation, which is employed as an effective avalanche multiplication photodetection mechanism or as an avalanche impact ionization current amplification mechanism.
公开/授权文献
- US08541734B2 Avalanche impact ionization amplification devices 公开/授权日：2013-09-24
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