Provided are a non-volatile memory element which can reduce a voltage of an electric pulse required for initial breakdown, and can lessen non-uniformity of a resistance value of the non-volatile memory element, and a non-volatile memory device including the non-volatile memory element. A non-volatile memory element comprises a first electrode (103); a second electrode (105); and a variable resistance layer (104) interposed between the first electrode (103) and the second electrode (105), a resistance value of the variable resistance layer being changeable reversibly in response to an electric signal applied between the first electrode (103) and the second electrode (105); wherein the variable resistance layer (104) includes a first region (106) which is in contact with the first electrode (103) and comprises an oxygen-deficient transition metal oxide and a second region (107) which is in contact with the second electrode (105) and comprises a transition metal oxide having a smaller degree of oxygen deficiency than the first region (106); and wherein the second electrode (105) comprises an alloy including iridium and at least one precious metal having lower Young's modulus than iridium, and a content of iridium is not less than 50 atm %.