GRAPHENE-LAYERED STRUCTURE, METHOD OF PREPARING THE SAME, AND TRANSPARENT ELECTRODE AND TRANSISTOR INCLUDING GRAPHENE-LAYERED STRUCTURE

Invention Application

US20120326128A1 GRAPHENE-LAYERED STRUCTURE, METHOD OF PREPARING THE SAME, AND TRANSPARENT ELECTRODE AND TRANSISTOR INCLUDING GRAPHENE-LAYERED STRUCTURE 有权

Title translation: 石墨层结构，其制备方法和透明电极和包括石墨层结构的晶体

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Patent Title: GRAPHENE-LAYERED STRUCTURE, METHOD OF PREPARING THE SAME, AND TRANSPARENT ELECTRODE AND TRANSISTOR INCLUDING GRAPHENE-LAYERED STRUCTURE
Patent Title (中): 石墨层结构，其制备方法和透明电极和包括石墨层结构的晶体
Application No.: US13530656

Application Date: 2012-06-22
Publication No.: US20120326128A1

Publication Date: 2012-12-27
Inventor: Hyeon-jin SHIN , Jae-young CHOI , Joung-real AHN , Jung-tak SEO
Applicant: Hyeon-jin SHIN , Jae-young CHOI , Joung-real AHN , Jung-tak SEO
Applicant Address: KR Suwon-si
Assignee: SAMSUNG ELECTRONICS CO., LTD.
Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
Current Assignee Address: KR Suwon-si
Priority: KR10-2011-0061796 20110624
Main IPC: H01L21/20
IPC: H01L21/20 ; B32B9/04 ; H01L29/16 ; B82Y30/00

GRAPHENE-LAYERED STRUCTURE, METHOD OF PREPARING THE SAME, AND TRANSPARENT ELECTRODE AND TRANSISTOR INCLUDING GRAPHENE-LAYERED STRUCTURE

Abstract:

A method of directly growing graphene of a graphene-layered structure, the method including ion-implanting at least one ion of a nitrogen ion and an oxygen ion on a surface of a silicon carbide (SiC) thin film to form an ion implantation layer in the SiC thin film; and heat treating the SiC thin film with the ion implantation layer formed therein to graphenize a SiC surface layer existing on the ion implantation layer.

Abstract(Chinese):

一种直接生长石墨烯层状结构的石墨烯的方法，该方法包括在碳化硅（SiC）薄膜的表面上离子注入氮离子和氧离子的至少一个离子以形成离子注入层 SiC薄膜; 以及利用其中形成的离子注入层对SiC薄膜进行热处理以对存在于离子注入层上的SiC表面层进行石墨化。

Public/Granted literature

US08679951B2 Graphene-layered structure, method of preparing the same, and transparent electrode and transistor including graphene-layered structure Public/Granted day:2014-03-25

Information query

Global Dossier Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/20	....半导体材料在基片上的沉积，例如外延生长