发明申请
US20120327726A1 Methods and Circuits for Dynamically Scaling DRAM Power and Performance
有权
用于动态缩放DRAM功率和性能的方法和电路
- 专利标题: Methods and Circuits for Dynamically Scaling DRAM Power and Performance
- 专利标题(中): 用于动态缩放DRAM功率和性能的方法和电路
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申请号: US13578864申请日: 2010-12-01
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公开(公告)号: US20120327726A1公开(公告)日: 2012-12-27
- 发明人: Ely Tsern , Thomas Vogelsang , Craig Hampel , Scott C. Best
- 申请人: Ely Tsern , Thomas Vogelsang , Craig Hampel , Scott C. Best
- 申请人地址: US CA Sunnyvale
- 专利权人: RAMBUS INC
- 当前专利权人: RAMBUS INC
- 当前专利权人地址: US CA Sunnyvale
- 国际申请: PCT/US10/58555 WO 20101201
- 主分类号: G11C5/14
- IPC分类号: G11C5/14 ; G11C7/10 ; G11C7/00
摘要:
A memory system supports high-performance and low-power modes. The memory system includes a memory core and a core interface. The memory core employs core supply voltages that remain the same in both modes. Supply voltages and signaling rates for the core interface may be scaled down to save power. Level shifters between the memory core and core interface level shift signals as needed to accommodate the signaling voltages used by the core interface in the different modes.
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