摘要:
A memory system supports high-performance and low-power modes. The memory system includes a memory core and a core interface. The memory core employs core supply voltages that remain the same in both modes. Supply voltages and signaling rates for the core interface may be scaled down to save power. Level shifters between the memory core and core interface level shift signals as needed to accommodate the signaling voltages used by the core interface in the different modes.
摘要:
Systems, among other embodiments, include topologies (data and/or control/address information) between an integrated circuit buffer device (that may be coupled to a master, such as a memory controller) and a plurality of integrated circuit memory devices. For example, data may be provided between the plurality of integrated circuit memory devices and the integrated circuit buffer device using separate segmented (or point-to-point link) signal paths in response to control/address information provided from the integrated circuit buffer device to the plurality of integrated circuit buffer devices using a single fly-by (or bus) signal path. An integrated circuit buffer device enables configurable effective memory organization of the plurality of integrated circuit memory devices. The memory organization represented by the integrated circuit buffer device to a memory controller may be different than the actual memory organization behind or coupled to the integrated circuit buffer device. The buffer device segments and merges the data transferred between the memory controller that expects a particular memory organization and actual memory organization.
摘要:
An integrated circuit device includes a transmitting means for transmitting transmit data to an external signal line and a storing means for storing a first value representative of a transmit phase adjustment that is used to adjust when the transmit data is transmitted by the transmitting means. The first value is determined based on information stored in a memory device external to the integrated circuit device.
摘要:
An integrated circuit device includes a transmitter circuit having an output driver to output data, and a register to store a value representative of an equalization co-efficient setting of the output driver. The value may be determined based on information stored in a supplemental memory device. The value is representative of an equalization co-efficient setting that compensates for signals present on an external signal line. The signals present on the external signal line comprise one selected from residual signals and cross coupled signals.
摘要:
Method embodiments including providing control information to a memory device is provided. The control information includes a first code which specifies that a write operation be initiated in the memory device. A signal is provided that indicates when the memory device is to begin sampling write data that is stored in the memory core during the write operation. A first bit of the write data is provided to the memory device during an even phase of a clock signal. A second bit of the write data is provided to the memory device during an odd phase of the clock signal.
摘要:
An integrated circuit device is described. The integrated circuit device includes a transmitter circuit having an output driver to output data, and a register to store a value representative of an equalization co-efficient setting of the output driver. The value may be determined based on information stored in a supplemental memory device.
摘要:
An integrated circuit device includes a delay circuit, sampling circuit and delay control circuit that cooperate to carry out adaptive timing calibration. The delay circuit generates a timing signal by delaying an aperiodic input signal for a first interval. The sampling circuit samples a data signal in response to the timing signal to generate a sequence of data samples, and also samples the data signal in response to a phase-shifted version of the timing signal to generate a sequence of edge samples. The delay control circuit adjusts the first interval based, at least in part, on a phase error indicated by the sequence of data samples and the sequence of edge samples.
摘要:
A memory system has first, second and third interconnects and an integrated circuit memory device coupled to the interconnects. The second interconnect conveys a write command and a read command. The third interconnect conveys write data and read data. The integrated circuit memory device includes a pin coupled to the first interconnect to receive a clock signal. The memory device also includes a first plurality of pins coupled to the second interconnect to receive the write command and read command, and a second plurality of pins coupled to the third interconnect to receive write data and to assert read data. Control information is applied to initiate the write operation after a first predetermined delay time transpires from when the write command is received. During a clock cycle of the clock signal, two bits of read data are conveyed by each pin of the second plurality of pins.
摘要:
Various module structures are disclosed which may be used to implement modules having 1 to N channels. Bus systems may be formed by the interconnection of such modules.
摘要:
Described are systems that employ configurable on-die termination elements that allow users to select from two or more termination topologies. One topology is programmable to support rail-to-rail or half-supply termination. Another topology selectively includes fixed or variable filter elements, thereby allowing the termination characteristics to be tuned for different levels of speed performance and power consumption. Termination voltages and impedances might also be adjusted.