发明申请
- 专利标题: METHOD FOR PRODUCING LIQUID-DISCHARGE-HEAD SUBSTRATE
- 专利标题(中): 生产液体放电头基板的方法
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申请号: US13526958申请日: 2012-06-19
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公开(公告)号: US20120329181A1公开(公告)日: 2012-12-27
- 发明人: Ryotaro Murakami , Shuji Koyama , Keisuke Kishimoto , Kenta Furusawa
- 申请人: Ryotaro Murakami , Shuji Koyama , Keisuke Kishimoto , Kenta Furusawa
- 申请人地址: JP Tokyo
- 专利权人: CANON KABUSHIKI KAISHA
- 当前专利权人: CANON KABUSHIKI KAISHA
- 当前专利权人地址: JP Tokyo
- 优先权: JP2011-137731 20110621; JP2012-112719 20120516
- 主分类号: H01L21/02
- IPC分类号: H01L21/02
摘要:
A method for producing a liquid-discharge-head substrate includes a step of preparing a silicon substrate including, at a front-surface side of the silicon substrate, an energy generating element; a step of forming a first etchant introduction hole on the front-surface side of the silicon substrate; a step of supplying a first etchant into the first etchant introduction hole formed on the front-surface side of the silicon substrate, and supplying a second etchant to a back-surface side of the silicon substrate; a step of stopping the supply of the second etchant; and a step of, after the supply of the second etchant has been stopped, forming a liquid supply port extending through front and back surfaces of the silicon substrate by the supply of the first etchant.
公开/授权文献
- US08951815B2 Method for producing liquid-discharge-head substrate 公开/授权日:2015-02-10
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