- 专利标题： BORDERLESS INTERCONNECT LINE STRUCTURE SELF-ALIGNED TO UPPER AND LOWER LEVEL CONTACT VIAS
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申请号： US13607677申请日： 2012-09-08
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公开(公告)号： US20120329275A1公开(公告)日： 2012-12-27
- 发明人: Shom Ponoth , David V. Horak , Charles W. Koburger, III , Chih-Chao Yang
- 申请人： Shom Ponoth , David V. Horak , Charles W. Koburger, III , Chih-Chao Yang
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L21/768
- IPC分类号： H01L21/768
摘要：
A metal layer is deposited on a planar surface on which top surfaces of underlying metal vias are exposed. The metal layer is patterned to form at least one metal block, which has a horizontal cross-sectional area of a metal line to be formed and at least one overlying metal via to be formed. Each upper portion of underlying metal vias is recessed outside of the area of a metal block located directly above. The upper portion of the at least one metal block is lithographically patterned to form an integrated line and via structure including a metal line having a substantially constant width and at least one overlying metal via having the same substantially constant width and borderlessly aligned to the metal line. An overlying-level dielectric material layer is deposited and planarized so that top surface(s) of the at least one overlying metal via is/are exposed.
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