发明申请
- 专利标题: Nested Multiple Erasure Correcting Codes for Storage Arrays
- 专利标题(中): 存储阵列的嵌套多重擦除校正码
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申请号: US13563123申请日: 2012-07-31
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公开(公告)号: US20120331367A1公开(公告)日: 2012-12-27
- 发明人: Mario Blaum , James L. Hafner , Steven R. Hetzler
- 申请人: Mario Blaum , James L. Hafner , Steven R. Hetzler
- 申请人地址: US NY Armonk
- 专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址: US NY Armonk
- 主分类号: H03M13/29
- IPC分类号: H03M13/29 ; G06F11/10
摘要:
Embodiments of the invention relate to storing data in a storage array. An aspect of the invention includes receiving write data. The write data is arranged into “r” rows and “n” columns of pages, with each page including a plurality of sectors. The write data is encoded using a plurality of horizontal and vertical erasure correcting codes on the pages. The encoding allows recovery from up to tr erasures in any one of the r rows, up to tr-1 erasures in any one of the remaining r-1 rows, up to tr-2 erasures in any one of the remaining r-2 rows, and so on, such that the encoding allows recovery from up to t1 erasures in the last remaining row. Encoded write data is output from the encoding. The encoded write data is written as a write stripe across n storage devices in a storage array.
公开/授权文献
- US08918701B2 Nested multiple erasure correcting codes for storage arrays 公开/授权日:2014-12-23
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